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Title: Trimethylaluminum and Oxygen Atomic Layer Deposition on Hydroxyl-Free Cu(111)

Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [3] ;  [1] ;  [4] ;  [1] ;  [1] ;  [5]
  1. School of Chemical Engineering, Purdue University, West Lafayette, Indiana 47907, United States
  2. Institute for Physical Chemistry, University of Innsbruck, A-6020 Innsbruck, Austria, Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
  3. Institute for Physical Chemistry, University of Innsbruck, A-6020 Innsbruck, Austria
  4. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States, Department of Physics, Purdue University, West Lafayette, Indiana 47907, United States
  5. Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States
Publication Date:
Type:
Published Article
Journal Name:
ACS Applied Materials and Interfaces
Additional Journal Information:
Journal Name: ACS Applied Materials and Interfaces Journal Volume: 7 Journal Issue: 30; Journal ID: ISSN 1944-8244
Publisher:
American Chemical Society
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1201001

Gharachorlou, Amir, Detwiler, Michael D., Gu, Xiang-Kui, Mayr, Lukas, Klötzer, Bernhard, Greeley, Jeffrey, Reifenberger, Ronald G., Delgass, W. Nicholas, Ribeiro, Fabio H., and Zemlyanov, Dmitry Y.. Trimethylaluminum and Oxygen Atomic Layer Deposition on Hydroxyl-Free Cu(111). United States: N. p., Web. doi:10.1021/acsami.5b03598.
Gharachorlou, Amir, Detwiler, Michael D., Gu, Xiang-Kui, Mayr, Lukas, Klötzer, Bernhard, Greeley, Jeffrey, Reifenberger, Ronald G., Delgass, W. Nicholas, Ribeiro, Fabio H., & Zemlyanov, Dmitry Y.. Trimethylaluminum and Oxygen Atomic Layer Deposition on Hydroxyl-Free Cu(111). United States. doi:10.1021/acsami.5b03598.
Gharachorlou, Amir, Detwiler, Michael D., Gu, Xiang-Kui, Mayr, Lukas, Klötzer, Bernhard, Greeley, Jeffrey, Reifenberger, Ronald G., Delgass, W. Nicholas, Ribeiro, Fabio H., and Zemlyanov, Dmitry Y.. 2015. "Trimethylaluminum and Oxygen Atomic Layer Deposition on Hydroxyl-Free Cu(111)". United States. doi:10.1021/acsami.5b03598.
@article{osti_1201001,
title = {Trimethylaluminum and Oxygen Atomic Layer Deposition on Hydroxyl-Free Cu(111)},
author = {Gharachorlou, Amir and Detwiler, Michael D. and Gu, Xiang-Kui and Mayr, Lukas and Klötzer, Bernhard and Greeley, Jeffrey and Reifenberger, Ronald G. and Delgass, W. Nicholas and Ribeiro, Fabio H. and Zemlyanov, Dmitry Y.},
abstractNote = {},
doi = {10.1021/acsami.5b03598},
journal = {ACS Applied Materials and Interfaces},
number = 30,
volume = 7,
place = {United States},
year = {2015},
month = {7}
}