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Title: Strain doping: Reversible single-axis control of a complex oxide lattice via helium implantation

Abstract

We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La 0.7Sr 0.3MnO 3 thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100 °C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. As a result, the ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials’ functional properties.

Authors:
 [1];  [2];  [3];  [4];  [4];  [4];  [4];  [3];  [3];  [3];  [4];  [5];  [5];  [4]
  1. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States); Louisiana State Univ., Baton Rouge, LA (United States)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States); Southeast Univ., Nanjing (China)
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Univ. of Tennessee, Knoxville, TN (United States)
  4. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  5. Univ. of Tennessee, Knoxville, TN (United States)
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1198520
Alternate Identifier(s):
OSTI ID: 1190744
Grant/Contract Number:  
AC05-00OR22725; SC0002136
Resource Type:
Published Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 114; Journal Issue: 25; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Guo, Hangwen, Dong, Shuai, Rack, Philip D., Budai, John D., Beekman, Christianne, Gai, Zheng, Siemons, Wolter, Wong, Anthony T., Snijders, Paul C., Dagotto, Elbio R., Ward, Thomas Zac, Gonzalez, C. M., Timilsina, R., and Herklotz, Andreas. Strain doping: Reversible single-axis control of a complex oxide lattice via helium implantation. United States: N. p., 2015. Web. doi:10.1103/PhysRevLett.114.256801.
Guo, Hangwen, Dong, Shuai, Rack, Philip D., Budai, John D., Beekman, Christianne, Gai, Zheng, Siemons, Wolter, Wong, Anthony T., Snijders, Paul C., Dagotto, Elbio R., Ward, Thomas Zac, Gonzalez, C. M., Timilsina, R., & Herklotz, Andreas. Strain doping: Reversible single-axis control of a complex oxide lattice via helium implantation. United States. doi:10.1103/PhysRevLett.114.256801.
Guo, Hangwen, Dong, Shuai, Rack, Philip D., Budai, John D., Beekman, Christianne, Gai, Zheng, Siemons, Wolter, Wong, Anthony T., Snijders, Paul C., Dagotto, Elbio R., Ward, Thomas Zac, Gonzalez, C. M., Timilsina, R., and Herklotz, Andreas. Thu . "Strain doping: Reversible single-axis control of a complex oxide lattice via helium implantation". United States. doi:10.1103/PhysRevLett.114.256801.
@article{osti_1198520,
title = {Strain doping: Reversible single-axis control of a complex oxide lattice via helium implantation},
author = {Guo, Hangwen and Dong, Shuai and Rack, Philip D. and Budai, John D. and Beekman, Christianne and Gai, Zheng and Siemons, Wolter and Wong, Anthony T. and Snijders, Paul C. and Dagotto, Elbio R. and Ward, Thomas Zac and Gonzalez, C. M. and Timilsina, R. and Herklotz, Andreas},
abstractNote = {We report on the use of helium ion implantation to independently control the out-of-plane lattice constant in epitaxial La0.7Sr0.3MnO3 thin films without changing the in-plane lattice constants. The process is reversible by a vacuum anneal. Resistance and magnetization measurements show that even a small increase in the out-of-plane lattice constant of less than 1% can shift the metal-insulator transition and Curie temperatures by more than 100 °C. Unlike conventional epitaxy-based strain tuning methods which are constrained not only by the Poisson effect but by the limited set of available substrates, the present study shows that strain can be independently and continuously controlled along a single axis. This permits novel control over orbital populations through Jahn-Teller effects, as shown by Monte Carlo simulations on a double-exchange model. As a result, the ability to reversibly control a single lattice parameter substantially broadens the phase space for experimental exploration of predictive models and leads to new possibilities for control over materials’ functional properties.},
doi = {10.1103/PhysRevLett.114.256801},
journal = {Physical Review Letters},
number = 25,
volume = 114,
place = {United States},
year = {2015},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.114.256801

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Cited by: 9 works
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