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Title: Material and Doping Dependence of the Nodal and Antinodal Dispersion Renormalizations in Single- and Multilayer Cuprates

Abstract

We present a review of bosonic renormalization effects on electronic carriers observed from angle-resolved photoemission spectra in the cuprates. Specifically, we discuss the viewpoint that these renormalizations represent coupling of the electrons to the lattice and review how materials dependence, such as the number of Cu O 2 layers, and doping dependence can be understood straightforwardly in terms of several aspects of electron-phonon coupling in layered correlated materials.

Authors:
 [1];  [2];  [3];  [4];  [5];  [6];  [2]
  1. Department of Physics and Astronomy, University of Waterloo, Waterloo, ON, Canada N2L 3G1, Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Stanford University, Stanford, CA 94305, USA
  2. Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Stanford University, Stanford, CA 94305, USA, Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA
  3. Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Stanford University, Stanford, CA 94305, USA, Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
  4. Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Stanford University, Stanford, CA 94305, USA, Department of Physics, Stanford University, Stanford, CA 94305, USA
  5. Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Stanford University, Stanford, CA 94305, USA, Department of Physics and Astrophysics, University of North Dakota, Grand Forks, ND 58202, USA
  6. Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory, Stanford University, Stanford, CA 94305, USA, Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA 94305, USA, Department of Physics, Stanford University, Stanford, CA 94305, USA, Department of Applied Physics, Stanford University, Stanford, CA 94305, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1198437
Grant/Contract Number:  
AC02-76SF00515; AC02-05CH11231
Resource Type:
Published Article
Journal Name:
Advances in Condensed Matter Physics
Additional Journal Information:
Journal Name: Advances in Condensed Matter Physics Journal Volume: 2010; Journal ID: ISSN 1687-8108
Publisher:
Hindawi Publishing Corporation
Country of Publication:
Egypt
Language:
English

Citation Formats

Johnston, S., Lee, W. S., Chen, Y., Nowadnick, E. A., Moritz, B., Shen, Z. -X., and Devereaux, T. P. Material and Doping Dependence of the Nodal and Antinodal Dispersion Renormalizations in Single- and Multilayer Cuprates. Egypt: N. p., 2010. Web. doi:10.1155/2010/968304.
Johnston, S., Lee, W. S., Chen, Y., Nowadnick, E. A., Moritz, B., Shen, Z. -X., & Devereaux, T. P. Material and Doping Dependence of the Nodal and Antinodal Dispersion Renormalizations in Single- and Multilayer Cuprates. Egypt. doi:10.1155/2010/968304.
Johnston, S., Lee, W. S., Chen, Y., Nowadnick, E. A., Moritz, B., Shen, Z. -X., and Devereaux, T. P. Fri . "Material and Doping Dependence of the Nodal and Antinodal Dispersion Renormalizations in Single- and Multilayer Cuprates". Egypt. doi:10.1155/2010/968304.
@article{osti_1198437,
title = {Material and Doping Dependence of the Nodal and Antinodal Dispersion Renormalizations in Single- and Multilayer Cuprates},
author = {Johnston, S. and Lee, W. S. and Chen, Y. and Nowadnick, E. A. and Moritz, B. and Shen, Z. -X. and Devereaux, T. P.},
abstractNote = {We present a review of bosonic renormalization effects on electronic carriers observed from angle-resolved photoemission spectra in the cuprates. Specifically, we discuss the viewpoint that these renormalizations represent coupling of the electrons to the lattice and review how materials dependence, such as the number of Cu O 2 layers, and doping dependence can be understood straightforwardly in terms of several aspects of electron-phonon coupling in layered correlated materials.},
doi = {10.1155/2010/968304},
journal = {Advances in Condensed Matter Physics},
number = ,
volume = 2010,
place = {Egypt},
year = {2010},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1155/2010/968304

Citation Metrics:
Cited by: 14 works
Citation information provided by
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