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Title: Memory and Spin Injection Devices Involving Half Metals

Abstract

We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injection devices.

Authors:
 [1];  [1];  [1];  [1]
  1. Department of Physics, University of California, Davis, CA 95616-8677, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1198038
Grant/Contract Number:  
AC52-07NA27344
Resource Type:
Published Article
Journal Name:
Journal of Nanomaterials
Additional Journal Information:
Journal Name: Journal of Nanomaterials Journal Volume: 2011; Journal ID: ISSN 1687-4110
Publisher:
Hindawi Publishing Corporation
Country of Publication:
Egypt
Language:
English

Citation Formats

Shaughnessy, M., Snow, Ryan, Damewood, L., and Fong, C. Y.. Memory and Spin Injection Devices Involving Half Metals. Egypt: N. p., 2011. Web. doi:10.1155/2011/140805.
Shaughnessy, M., Snow, Ryan, Damewood, L., & Fong, C. Y.. Memory and Spin Injection Devices Involving Half Metals. Egypt. doi:10.1155/2011/140805.
Shaughnessy, M., Snow, Ryan, Damewood, L., and Fong, C. Y.. Sat . "Memory and Spin Injection Devices Involving Half Metals". Egypt. doi:10.1155/2011/140805.
@article{osti_1198038,
title = {Memory and Spin Injection Devices Involving Half Metals},
author = {Shaughnessy, M. and Snow, Ryan and Damewood, L. and Fong, C. Y.},
abstractNote = {We suggest memory and spin injection devices fabricated with half-metallic materials and based on the anomalous Hall effect. Schematic diagrams of the memory chips, in thin film and bulk crystal form, are presented. Spin injection devices made in thin film form are also suggested. These devices do not need any external magnetic field but make use of their own magnetization. Only a gate voltage is needed. The carriers are 100% spin polarized. Memory devices may potentially be smaller, faster, and less volatile than existing ones, and the injection devices may be much smaller and more efficient than existing spin injection devices.},
doi = {10.1155/2011/140805},
journal = {Journal of Nanomaterials},
number = ,
volume = 2011,
place = {Egypt},
year = {2011},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1155/2011/140805

Citation Metrics:
Cited by: 1 work
Citation information provided by
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