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Title: Effects of deposition termination on Cu 2ZnSnSe 4 device characteristics

We use co-evaporated Cu 2ZnSnSe 4 (CZTSe) to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Moreover, surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.
Authors:
 [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [1]
  1. National Renewable Energy Lab. (NREL), Golden, CO (United States)
  2. Univ. of California, Los Angeles, CA (United States)
Publication Date:
Report Number(s):
NREL/JA-5K00-61834
Journal ID: ISSN 0040-6090
Grant/Contract Number:
AC36-08GO28308
Type:
Published Article
Journal Name:
Thin Solid Films
Additional Journal Information:
Journal Volume: 582; Journal Issue: C; Related Information: Thin Solid Films; Journal ID: ISSN 0040-6090
Publisher:
Elsevier
Research Org:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Copper zinc tin selenide; Copper zinc tin sulfide; Kesterite; Thin films; Surface; Hole barrier; Voltage; Solar cell
OSTI Identifier:
1197976
Alternate Identifier(s):
OSTI ID: 1220597

Repins, I. L., Li, J. V., Kanevce, A., Perkins, C. L., Steirer, K. X., Pankow, J., Teeter, G., Kuciauskas, D., Beall, C., Dehart, C., Carapella, J., Bob, B., Park, J. -S., and Wei, S. -H.. Effects of deposition termination on Cu2ZnSnSe4 device characteristics. United States: N. p., Web. doi:10.1016/j.tsf.2014.09.028.
Repins, I. L., Li, J. V., Kanevce, A., Perkins, C. L., Steirer, K. X., Pankow, J., Teeter, G., Kuciauskas, D., Beall, C., Dehart, C., Carapella, J., Bob, B., Park, J. -S., & Wei, S. -H.. Effects of deposition termination on Cu2ZnSnSe4 device characteristics. United States. doi:10.1016/j.tsf.2014.09.028.
Repins, I. L., Li, J. V., Kanevce, A., Perkins, C. L., Steirer, K. X., Pankow, J., Teeter, G., Kuciauskas, D., Beall, C., Dehart, C., Carapella, J., Bob, B., Park, J. -S., and Wei, S. -H.. 2014. "Effects of deposition termination on Cu2ZnSnSe4 device characteristics". United States. doi:10.1016/j.tsf.2014.09.028.
@article{osti_1197976,
title = {Effects of deposition termination on Cu2ZnSnSe4 device characteristics},
author = {Repins, I. L. and Li, J. V. and Kanevce, A. and Perkins, C. L. and Steirer, K. X. and Pankow, J. and Teeter, G. and Kuciauskas, D. and Beall, C. and Dehart, C. and Carapella, J. and Bob, B. and Park, J. -S. and Wei, S. -H.},
abstractNote = {We use co-evaporated Cu2ZnSnSe4 (CZTSe) to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Moreover, surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.},
doi = {10.1016/j.tsf.2014.09.028},
journal = {Thin Solid Films},
number = C,
volume = 582,
place = {United States},
year = {2014},
month = {9}
}