Effects of deposition termination on Cu2ZnSnSe4 device characteristics

Repins, I. L.; Li, J. V.; Kanevce, A.; Perkins, C. L.; Steirer, K. X.; Pankow, J.; Teeter, G.; Kuciauskas, D.; Beall, C.; Dehart, C.; Carapella, J.; Bob, B.; Park, J. -S.; Wei, S. -H.

doi:10.1016/j.tsf.2014.09.028

Title: Effects of deposition termination on Cu2ZnSnSe4 device characteristics

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Abstract

We use co-evaporated Cu₂ZnSnSe₄ (CZTSe) to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Moreover, surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.

Authors:: Repins, I. L.; Li, J. V.; Kanevce, A.; Perkins, C. L.; Steirer, K. X.; Pankow, J.; Teeter, G.; Kuciauskas, D.; Beall, C.; Dehart, C.; Carapella, J.; Bob, B.; Park, J. -S.; Wei, S. -H.

Publication Date:: Fri May 01 00:00:00 EDT 2015

Research Org.:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Org.:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

OSTI Identifier:: 1197976

Alternate Identifier(s):: OSTI ID: 1220597

Report Number(s):: NREL/JA-5K00-61834
Journal ID: ISSN 0040-6090; S0040609014009067; PII: S0040609014009067

Grant/Contract Number:: AC36-08GO28308

Resource Type:: Published Article

Journal Name:: Thin Solid Films

Additional Journal Information:: Journal Name: Thin Solid Films Journal Volume: 582 Journal Issue: C; Journal ID: ISSN 0040-6090

Publisher:: Elsevier

Country of Publication:: Netherlands

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; Copper zinc tin selenide; Copper zinc tin sulfide; Kesterite; Thin films; Surface; Hole barrier; Voltage; Solar cell

Citation Formats


                    Repins, I. L., Li, J. V., Kanevce, A., Perkins, C. L., Steirer, K. X., Pankow, J., Teeter, G., Kuciauskas, D., Beall, C., Dehart, C., Carapella, J., Bob, B., Park, J. -S., and Wei, S. -H. Effects of deposition termination on Cu2ZnSnSe4 device characteristics.  Netherlands: N. p., 2015. 
Web.  doi:10.1016/j.tsf.2014.09.028.

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                    Repins, I. L., Li, J. V., Kanevce, A., Perkins, C. L., Steirer, K. X., Pankow, J., Teeter, G., Kuciauskas, D., Beall, C., Dehart, C., Carapella, J., Bob, B., Park, J. -S., & Wei, S. -H. Effects of deposition termination on Cu2ZnSnSe4 device characteristics.  Netherlands.  https://doi.org/10.1016/j.tsf.2014.09.028

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                    Repins, I. L., Li, J. V., Kanevce, A., Perkins, C. L., Steirer, K. X., Pankow, J., Teeter, G., Kuciauskas, D., Beall, C., Dehart, C., Carapella, J., Bob, B., Park, J. -S., and Wei, S. -H. Fri .  
"Effects of deposition termination on Cu2ZnSnSe4 device characteristics".  Netherlands.  https://doi.org/10.1016/j.tsf.2014.09.028.

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@article{osti_1197976,

  title        = {Effects of deposition termination on Cu2ZnSnSe4 device characteristics},

  author       = {Repins, I. L. and Li, J. V. and Kanevce, A. and Perkins, C. L. and Steirer, K. X. and Pankow, J. and Teeter, G. and Kuciauskas, D. and Beall, C. and Dehart, C. and Carapella, J. and Bob, B. and Park, J. -S. and Wei, S. -H.},

  abstractNote = {We use co-evaporated Cu2ZnSnSe4 (CZTSe) to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Moreover, surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.},

  doi          = {10.1016/j.tsf.2014.09.028},

  journal      = {Thin Solid Films},

  number       = C,

  volume       = 582,

  place        = {Netherlands},

  year         = {Fri May 01 00:00:00 EDT 2015},

  month        = {Fri May 01 00:00:00 EDT 2015}

}

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