skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays

Abstract

We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model. The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.

Authors:
 [1];  [1];  [2];  [3];  [1]
  1. Department of Physics and Astronomy and Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, TN 37235, USA
  2. Department of Physics and Astronomy and Institute for Advanced Materials, Nanoscience and Technology, University of North Carolina, Chapel Hill, NC 27514, USA
  3. Department of Physics and Astronomy and Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Nashville, TN 37235, USA, Department of Physics and Astronomy, Rutgers, The State University of New Jersey, Piscataway, NJ 08854, USA
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1197928
Grant/Contract Number:  
FG02-01ER45916
Resource Type:
Published Article
Journal Name:
Advances in OptoElectronics
Additional Journal Information:
Journal Name: Advances in OptoElectronics Journal Volume: 2008; Journal ID: ISSN 1687-563X
Publisher:
Hindawi Publishing Corporation
Country of Publication:
Country unknown/Code not available
Language:
English

Citation Formats

Donev, E. U., Suh, J. Y., Lopez, R., Feldman, L. C., and Haglund, R. F. Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays. Country unknown/Code not available: N. p., 2008. Web. doi:10.1155/2008/739135.
Donev, E. U., Suh, J. Y., Lopez, R., Feldman, L. C., & Haglund, R. F. Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays. Country unknown/Code not available. doi:10.1155/2008/739135.
Donev, E. U., Suh, J. Y., Lopez, R., Feldman, L. C., and Haglund, R. F. Tue . "Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays". Country unknown/Code not available. doi:10.1155/2008/739135.
@article{osti_1197928,
title = {Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays},
author = {Donev, E. U. and Suh, J. Y. and Lopez, R. and Feldman, L. C. and Haglund, R. F.},
abstractNote = {We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model. The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.},
doi = {10.1155/2008/739135},
journal = {Advances in OptoElectronics},
number = ,
volume = 2008,
place = {Country unknown/Code not available},
year = {2008},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1155/2008/739135

Save / Share: