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Title: Defect-enhanced void filling and novel filled phases of open-structure skutterudites

Abstract

Here, we report the design of novel filled CoSb3 skutterudite phases based on a combination of filling and Sb-substituted Ga/In defects. Ga/In doped skutterudite phases with Li-, Nd-, and Sm-fillings can be formed via this strategy, which can have relatively wider ranges of carrier concentration than other conventional filled skutterudite phases.

Authors:
 [1];  [1];  [1];  [2];  [1];  [3];  [4]
  1. Chinese Academy of Sciences (CAS), Beijing (China). Shanghai Inst. of Ceramics
  2. Chinese Academy of Sciences (CAS), Beijing (China). Shanghai Inst. of Ceramics; Shanghai Univ. (China). Materials Genome Inst.
  3. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  4. Univ. of Washington, Seattle, WA (United States). Materials Science and Engineering Dept.
Publication Date:
Research Org.:
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Energy Frontier Research Centers (EFRC) (United States). Solid-State Solar-Thermal Energy Conversion Center (S3TEC)
Sponsoring Org.:
USDOE Advanced Research Projects Agency - Energy (ARPA-E); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1195811
Grant/Contract Number:  
AC05-00OR22725; SC0001299; FG02-09ER46577
Resource Type:
Accepted Manuscript
Journal Name:
ChemComm
Additional Journal Information:
Journal Volume: 51; Journal Issue: 54; Journal ID: ISSN 1359-7345
Publisher:
Royal Society of Chemistry
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; 36 MATERIALS SCIENCE

Citation Formats

Xi, Lili, Qiu, Yuting, Shi, Xun, Zhang, Wenqing, Chen, Lidong, Singh, David J., and Yang, Jihui. Defect-enhanced void filling and novel filled phases of open-structure skutterudites. United States: N. p., 2015. Web. doi:10.1039/C5CC03111G.
Xi, Lili, Qiu, Yuting, Shi, Xun, Zhang, Wenqing, Chen, Lidong, Singh, David J., & Yang, Jihui. Defect-enhanced void filling and novel filled phases of open-structure skutterudites. United States. doi:10.1039/C5CC03111G.
Xi, Lili, Qiu, Yuting, Shi, Xun, Zhang, Wenqing, Chen, Lidong, Singh, David J., and Yang, Jihui. Thu . "Defect-enhanced void filling and novel filled phases of open-structure skutterudites". United States. doi:10.1039/C5CC03111G. https://www.osti.gov/servlets/purl/1195811.
@article{osti_1195811,
title = {Defect-enhanced void filling and novel filled phases of open-structure skutterudites},
author = {Xi, Lili and Qiu, Yuting and Shi, Xun and Zhang, Wenqing and Chen, Lidong and Singh, David J. and Yang, Jihui},
abstractNote = {Here, we report the design of novel filled CoSb3 skutterudite phases based on a combination of filling and Sb-substituted Ga/In defects. Ga/In doped skutterudite phases with Li-, Nd-, and Sm-fillings can be formed via this strategy, which can have relatively wider ranges of carrier concentration than other conventional filled skutterudite phases.},
doi = {10.1039/C5CC03111G},
journal = {ChemComm},
number = 54,
volume = 51,
place = {United States},
year = {2015},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
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Cited by: 9 works
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