Lee, S. R., Wright, A. F., Modine, N. A., Battaile, C. C., Foiles, S. M., Thomas, J. C., and Van der Ven, A.. First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs. United States: N. p.,
Web. doi:10.1103/PhysRevB.92.045205.
Lee, S. R., Wright, A. F., Modine, N. A., Battaile, C. C., Foiles, S. M., Thomas, J. C., & Van der Ven, A.. First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs. United States. doi:10.1103/PhysRevB.92.045205.
Lee, S. R., Wright, A. F., Modine, N. A., Battaile, C. C., Foiles, S. M., Thomas, J. C., and Van der Ven, A.. 2015.
"First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs". United States.
doi:10.1103/PhysRevB.92.045205.
@article{osti_1194265,
title = {First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs},
author = {Lee, S. R. and Wright, A. F. and Modine, N. A. and Battaile, C. C. and Foiles, S. M. and Thomas, J. C. and Van der Ven, A.},
abstractNote = {},
doi = {10.1103/PhysRevB.92.045205},
journal = {Physical Review B},
number = 4,
volume = 92,
place = {United States},
year = {2015},
month = {7}
}
