First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs

Lee, S. R.; Wright, A. F.; Modine, N. A.; Battaile, C. C.; Foiles, S. M.; Thomas, J. C.; Van der Ven, A.

doi:10.1103/PhysRevB.92.045205

Title: First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs

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Authors:: Lee, S. R.; Wright, A. F.; Modine, N. A.; Battaile, C. C.; Foiles, S. M.; Thomas, J. C.; Van der Ven, A.

Publication Date:: Tue Jul 14 00:00:00 EDT 2015

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1194265

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 92; Journal Issue: 4; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Lee, S. R., Wright, A. F., Modine, N. A., Battaile, C. C., Foiles, S. M., Thomas, J. C., and Van der Ven, A. First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs.  United States: N. p., 2015. 
Web.  doi:10.1103/PhysRevB.92.045205.

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                    Lee, S. R., Wright, A. F., Modine, N. A., Battaile, C. C., Foiles, S. M., Thomas, J. C., & Van der Ven, A. First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs.  United States.  https://doi.org/10.1103/PhysRevB.92.045205

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                    Lee, S. R., Wright, A. F., Modine, N. A., Battaile, C. C., Foiles, S. M., Thomas, J. C., and Van der Ven, A. Tue .  
"First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs".  United States.  https://doi.org/10.1103/PhysRevB.92.045205.

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@article{osti_1194265,

  title        = {First-principles survey of the structure, formation energies, and transition levels of As-interstitial defects in InGaAs},

  author       = {Lee, S. R. and Wright, A. F. and Modine, N. A. and Battaile, C. C. and Foiles, S. M. and Thomas, J. C. and Van der Ven, A.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.92.045205},

  journal      = {Physical Review B},

  number       = 4,

  volume       = 92,

  place        = {United States},

  year         = {Tue Jul 14 00:00:00 EDT 2015},

  month        = {Tue Jul 14 00:00:00 EDT 2015}

}

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