Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Zuo, Daniel; Liu, Runyu; Wasserman, Daniel; Mabon, James; He, Zhao -Yu; Liu, Shi; Zhang, Yong -Hang; Kadlec, Emil A.; Olson, Benjamin V.; Shaner, Eric A.

doi:10.1063/1.4913312

Title: Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Abstract

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10^–2 cm²/s. We also report on the device's optical response characteristics at 78 K.

Authors:

Zuo, Daniel ^[1]; Liu, Runyu ^[1]; Wasserman, Daniel ^[1]; Mabon, James ^[1]; He, Zhao -Yu ^[2]; Liu, Shi ^[2]; Zhang, Yong -Hang ^[2]; Kadlec, Emil A. ^[3]; Olson, Benjamin V. ^[3]; Shaner, Eric A. ^[3]

Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
Arizona State Univ., Tempe, AZ (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Publication Date:: 2015-02-18

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1188579

Alternate Identifier(s):: OSTI ID: 1226712

Report Number(s):: SAND-2014-20720J
Journal ID: ISSN 0003-6951; APPLAB; 553947

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 106; Journal Issue: 7; Journal ID: ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE; III-V semiconductors; photoluminescence; diffusion; carrier generation; electron beams

Citation Formats


                    Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao -Yu, Liu, Shi, Zhang, Yong -Hang, Kadlec, Emil A., Olson, Benjamin V., and Shaner, Eric A. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors.  United States: N. p., 2015. 
Web.  doi:10.1063/1.4913312.

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                    Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao -Yu, Liu, Shi, Zhang, Yong -Hang, Kadlec, Emil A., Olson, Benjamin V., & Shaner, Eric A. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors.  United States.  https://doi.org/10.1063/1.4913312

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                    Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao -Yu, Liu, Shi, Zhang, Yong -Hang, Kadlec, Emil A., Olson, Benjamin V., and Shaner, Eric A. Wed .  
"Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors".  United States.  https://doi.org/10.1063/1.4913312.  https://www.osti.gov/servlets/purl/1188579.

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@article{osti_1188579,

  title        = {Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors},

  author       = {Zuo, Daniel and Liu, Runyu and Wasserman, Daniel and Mabon, James and He, Zhao -Yu and Liu, Shi and Zhang, Yong -Hang and Kadlec, Emil A. and Olson, Benjamin V. and Shaner, Eric A.},

  abstractNote = {We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10–2 cm2/s. We also report on the device's optical response characteristics at 78 K.},

  doi          = {10.1063/1.4913312},

  journal      = {Applied Physics Letters},

  number       = 7,

  volume       = 106,

  place        = {United States},

  year         = {2015},

  month        = {2}

}

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Works referenced in this record:

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Quantitative analysis of electron‐beam‐induced current profiles across p–n junctions in GaAs/Al0.4Ga0.6As heterostructures
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Bonard, Jean‐Marc; Ganière, Jean‐Daniel
Journal of Applied Physics, Vol. 79, Issue 9
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Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
journal, July 2013

Olson, B. V.; Shaner, E. A.; Kim, J. K.
Applied Physics Letters, Vol. 103, Issue 5
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Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
journal, December 2010

Connelly, Blair C.; Metcalfe, Grace D.; Shen, Hongen
Applied Physics Letters, Vol. 97, Issue 25
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Surface recombination velocity reduction in type-II InAs∕GaSb superlattice photodiodes due to ammonium sulfide passivation
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Li, Jian V.; Chuang, Shun Lien; Aifer, Edward
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All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices
journal, May 2013

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Works referencing / citing this record:

Fabrication and Characterization of an InAs(Sb)/In _x Ga _{1− x} As _y Sb _{1− y} Type‐II Superlattice
journal, May 2019

Du, Peng; Fang, Xuan; Gong, Qian
physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 12
DOI: 10.1002/pssr.201900474

Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors
journal, June 2019

Rhiger, David R.; Smith, Edward P.
Journal of Electronic Materials, Vol. 48, Issue 10
DOI: 10.1007/s11664-019-07319-y

Theoretical study of native point defects in strained-layer superlattice systems
journal, April 2018

Krishnamurthy, S.; Yu, Zhi Gang
Journal of Applied Physics, Vol. 123, Issue 16
DOI: 10.1063/1.5004176

Temperature-Dependent Minority-Carrier Mobility in $p$ -Type $In As$ / $Ga Sb$ Type-II-Superlattice Photodetectors
journal, February 2019

Taghipour, Z.; Lee, S.; Myers, S. A.
Physical Review Applied, Vol. 11, Issue 2
DOI: 10.1103/physrevapplied.11.024047

Fabrication and Characterization of an InAs(Sb)/In _x Ga _{1− x} As _y Sb _{1− y} Type‐II Superlattice
journal, May 2019

Du, Peng; Fang, Xuan; Gong, Qian
physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 12
DOI: 10.1002/pssr.201970045

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Similar Records

Title: Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Abstract

Citation Formats

Proposal for strained type II superlattice infrared detectors journal, September 1987

Type-II InAs/GaInSb superlattices for infrared detection: an overview conference, May 2005

Strained and Unstrained Layer Superlattices for Infrared Detection journal, March 2009

Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices journal, July 2013

nBn detector, an infrared detector with reduced dark current and higher operating temperature journal, October 2006

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices journal, October 2012

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization journal, November 2011

Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control journal, April 2013

On the analysis of diffusion length measurements by SEM journal, November 1982

Quantitative analysis of electron‐beam‐induced current profiles across p–n junctions in GaAs/Al0.4Ga0.6As heterostructures journal, May 1996

Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys journal, July 2013

Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence journal, December 2010

CASINO V2.42—A Fast and Easy-to-use Modeling Tool for Scanning Electron Microscopy and Microanalysis Users journal, January 2007

Surface recombination velocity reduction in type-II InAs∕GaSb superlattice photodiodes due to ammonium sulfide passivation journal, May 2007

All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices journal, May 2013

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Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors journal, June 2019

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Temperature-Dependent Minority-Carrier Mobility in p -Type In As / Ga Sb Type-II-Superlattice Photodetectors journal, February 2019

Fabrication and Characterization of an InAs(Sb)/In x Ga 1− x As y Sb 1− y Type‐II Superlattice journal, May 2019

Proposal for strained type II superlattice infrared detectors
journal, September 1987

Type-II InAs/GaInSb superlattices for infrared detection: an overview
conference, May 2005

Strained and Unstrained Layer Superlattices for Infrared Detection
journal, March 2009

Advances in antimonide-based Type-II superlattices for infrared detection and imaging at center for quantum devices
journal, July 2013

nBn detector, an infrared detector with reduced dark current and higher operating temperature
journal, October 2006

Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices
journal, October 2012

Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
journal, November 2011

Direct observation of minority carrier lifetime improvement in InAs/GaSb type-II superlattice photodiodes via interfacial layer control
journal, April 2013

On the analysis of diffusion length measurements by SEM
journal, November 1982

Quantitative analysis of electron‐beam‐induced current profiles across p–n junctions in GaAs/Al0.4Ga0.6As heterostructures
journal, May 1996

Identification of dominant recombination mechanisms in narrow-bandgap InAs/InAsSb type-II superlattices and InAsSb alloys
journal, July 2013

Direct minority carrier lifetime measurements and recombination mechanisms in long-wave infrared type II superlattices using time-resolved photoluminescence
journal, December 2010

CASINO V2.42—A Fast and Easy-to-use Modeling Tool for Scanning Electron Microscopy and Microanalysis Users
journal, January 2007

Surface recombination velocity reduction in type-II InAs∕GaSb superlattice photodiodes due to ammonium sulfide passivation
journal, May 2007

All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices
journal, May 2013

Fabrication and Characterization of an InAs(Sb)/In _x Ga _{1− x} As _y Sb _{1− y} Type‐II Superlattice
journal, May 2019

Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors
journal, June 2019

Theoretical study of native point defects in strained-layer superlattice systems
journal, April 2018

Temperature-Dependent Minority-Carrier Mobility in $p$ -Type $In As$ / $Ga Sb$ Type-II-Superlattice Photodetectors
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