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Title: Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors

Abstract

We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10–2 cm2/s. We also report on the device's optical response characteristics at 78 K.

Authors:
 [1];  [1];  [1];  [1];  [2];  [2];  [2];  [3];  [3];  [3]
  1. Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
  2. Arizona State Univ., Tempe, AZ (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1188579
Alternate Identifier(s):
OSTI ID: 1226712
Report Number(s):
SAND-2014-20720J
Journal ID: ISSN 0003-6951; APPLAB; 553947
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 106; Journal Issue: 7; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; III-V semiconductors; photoluminescence; diffusion; carrier generation; electron beams

Citation Formats

Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao -Yu, Liu, Shi, Zhang, Yong -Hang, Kadlec, Emil A., Olson, Benjamin V., and Shaner, Eric A.. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors. United States: N. p., 2015. Web. https://doi.org/10.1063/1.4913312.
Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao -Yu, Liu, Shi, Zhang, Yong -Hang, Kadlec, Emil A., Olson, Benjamin V., & Shaner, Eric A.. Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors. United States. https://doi.org/10.1063/1.4913312
Zuo, Daniel, Liu, Runyu, Wasserman, Daniel, Mabon, James, He, Zhao -Yu, Liu, Shi, Zhang, Yong -Hang, Kadlec, Emil A., Olson, Benjamin V., and Shaner, Eric A.. Wed . "Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors". United States. https://doi.org/10.1063/1.4913312. https://www.osti.gov/servlets/purl/1188579.
@article{osti_1188579,
title = {Direct minority carrier transport characterization of InAs/InAsSb superlattice nBn photodetectors},
author = {Zuo, Daniel and Liu, Runyu and Wasserman, Daniel and Mabon, James and He, Zhao -Yu and Liu, Shi and Zhang, Yong -Hang and Kadlec, Emil A. and Olson, Benjamin V. and Shaner, Eric A.},
abstractNote = {We present an extensive characterization of the minority carrier transport properties in an nBn mid-wave infrared detector incorporating a Ga-free InAs/InAsSb type-II superlattice as the absorbing region. Using a modified electron beam induced current technique in conjunction with time-resolved photoluminescence, we were able to determine several important transport parameters of the absorber region in the device, which uses a barrier layer to reduce dark current. For a device at liquid He temperatures we report a minority carrier diffusion length of 750 nm and a minority carrier lifetime of 202 ns, with a vertical diffusivity of 2.78 x 10–2 cm2/s. We also report on the device's optical response characteristics at 78 K.},
doi = {10.1063/1.4913312},
journal = {Applied Physics Letters},
number = 7,
volume = 106,
place = {United States},
year = {2015},
month = {2}
}

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Cited by: 9 works
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    Works referencing / citing this record:

    Fabrication and Characterization of an InAs(Sb)/In x Ga 1− x As y Sb 1− y Type‐II Superlattice
    journal, May 2019

    • Du, Peng; Fang, Xuan; Gong, Qian
    • physica status solidi (RRL) – Rapid Research Letters, Vol. 13, Issue 12
    • DOI: 10.1002/pssr.201900474

    Carrier Transport in the Valence Band of nBn III–V Superlattice Infrared Detectors
    journal, June 2019


    Theoretical study of native point defects in strained-layer superlattice systems
    journal, April 2018

    • Krishnamurthy, S.; Yu, Zhi Gang
    • Journal of Applied Physics, Vol. 123, Issue 16
    • DOI: 10.1063/1.5004176

    Temperature-Dependent Minority-Carrier Mobility in p -Type In As / Ga Sb Type-II-Superlattice Photodetectors
    journal, February 2019