Monolayer PtSe 2 , a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt
Abstract
Single-layer transition-metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, spintronics, catalysis, and so on. Here, we demonstrate the epitaxial growth of high-quality single-crystal, monolayer platinum diselenide (PtSe2), a new member of the layered TMDs family, by a single step of direct selenization of a Pt(111) substrate. A combination of atomic-resolution experimental characterizations and first-principle theoretic calculations reveals the atomic structure of the monolayer PtSe2/Pt(111). Angle-resolved photoemission spectroscopy measurements confirm for the first time the semiconducting electronic structure of monolayer PtSe2 (in contrast to its semimetallic bulk counterpart). The photocatalytic activity of monolayer PtSe2 film is evaluated by a methylene-blue photodegradation experiment, demonstrating its practical application as a promising photocatalyst. Moreover, circular polarization calculations predict that monolayer PtSe2 has also potential applications in valleytronics.
- Authors:
-
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- Chinese Academy of Sciences (CAS), Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
- Chinese Academy of Sciences (CAS), Beijing (China)
- Tsinghua Univ., Beijing (China)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Jeol Ltd., Tokyo (Japan)
- Chinese Academy of Sciences (CAS), Beijing (China); Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Hiroshima Univ., Higashi-Hiroshima (Japan)
- Tsinghua Univ., Beijing (China); Collaborative Innovation Center of Quantum Matter, Beijing (China)
- National Univ. of Singapore (Singapore)
- Vanderbilt Univ., Nashville, TN (United States); Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States); Vanderbilt Univ., Nashville, TN (United States)
- Sponsoring Org.:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- OSTI Identifier:
- 1185929
- Alternate Identifier(s):
- OSTI ID: 1597683
- Grant/Contract Number:
- AC05-00OR22725; FG02-09ER46554; 2013CBA01600; 2011CB932700; 61222112; 61390501; 5132504; 11334006; 1731300500015; XDB07030100; ACI-1053575
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 15; Journal Issue: 6; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; epitaxial growth; monolayer; photocatalyst; PtSe2; transition-metal dichalcogenides; two-dimensional materials
Citation Formats
Wang, Yeliang, Li, Linfei, Yao, Wei, Song, Shiru, Sun, J. T., Pan, Jinbo, Ren, Xiao, Li, Chen, Okunishi, Eiji, Wang, Yu-Qi, Wang, Eryin, Shao, Yan, Zhang, Y. Y., Yang, Hai-tao, Schwier, Eike F., Iwasawa, Hideaki, Shimada, Kenya, Taniguchi, Masaki, Cheng, Zhaohua, Zhou, Shuyun, Du, Shixuan, Pennycook, Stephen J., Pantelides, Sokrates T., and Gao, Hong-Jun. Monolayer PtSe 2 , a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt. United States: N. p., 2015.
Web. doi:10.1021/acs.nanolett.5b00964.
Wang, Yeliang, Li, Linfei, Yao, Wei, Song, Shiru, Sun, J. T., Pan, Jinbo, Ren, Xiao, Li, Chen, Okunishi, Eiji, Wang, Yu-Qi, Wang, Eryin, Shao, Yan, Zhang, Y. Y., Yang, Hai-tao, Schwier, Eike F., Iwasawa, Hideaki, Shimada, Kenya, Taniguchi, Masaki, Cheng, Zhaohua, Zhou, Shuyun, Du, Shixuan, Pennycook, Stephen J., Pantelides, Sokrates T., & Gao, Hong-Jun. Monolayer PtSe 2 , a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt. United States. https://doi.org/10.1021/acs.nanolett.5b00964
Wang, Yeliang, Li, Linfei, Yao, Wei, Song, Shiru, Sun, J. T., Pan, Jinbo, Ren, Xiao, Li, Chen, Okunishi, Eiji, Wang, Yu-Qi, Wang, Eryin, Shao, Yan, Zhang, Y. Y., Yang, Hai-tao, Schwier, Eike F., Iwasawa, Hideaki, Shimada, Kenya, Taniguchi, Masaki, Cheng, Zhaohua, Zhou, Shuyun, Du, Shixuan, Pennycook, Stephen J., Pantelides, Sokrates T., and Gao, Hong-Jun. Thu .
"Monolayer PtSe 2 , a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt". United States. https://doi.org/10.1021/acs.nanolett.5b00964. https://www.osti.gov/servlets/purl/1185929.
@article{osti_1185929,
title = {Monolayer PtSe 2 , a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt},
author = {Wang, Yeliang and Li, Linfei and Yao, Wei and Song, Shiru and Sun, J. T. and Pan, Jinbo and Ren, Xiao and Li, Chen and Okunishi, Eiji and Wang, Yu-Qi and Wang, Eryin and Shao, Yan and Zhang, Y. Y. and Yang, Hai-tao and Schwier, Eike F. and Iwasawa, Hideaki and Shimada, Kenya and Taniguchi, Masaki and Cheng, Zhaohua and Zhou, Shuyun and Du, Shixuan and Pennycook, Stephen J. and Pantelides, Sokrates T. and Gao, Hong-Jun},
abstractNote = {Single-layer transition-metal dichalcogenides (TMDs) receive significant attention due to their intriguing physical properties for both fundamental research and potential applications in electronics, optoelectronics, spintronics, catalysis, and so on. Here, we demonstrate the epitaxial growth of high-quality single-crystal, monolayer platinum diselenide (PtSe2), a new member of the layered TMDs family, by a single step of direct selenization of a Pt(111) substrate. A combination of atomic-resolution experimental characterizations and first-principle theoretic calculations reveals the atomic structure of the monolayer PtSe2/Pt(111). Angle-resolved photoemission spectroscopy measurements confirm for the first time the semiconducting electronic structure of monolayer PtSe2 (in contrast to its semimetallic bulk counterpart). The photocatalytic activity of monolayer PtSe2 film is evaluated by a methylene-blue photodegradation experiment, demonstrating its practical application as a promising photocatalyst. Moreover, circular polarization calculations predict that monolayer PtSe2 has also potential applications in valleytronics.},
doi = {10.1021/acs.nanolett.5b00964},
journal = {Nano Letters},
number = 6,
volume = 15,
place = {United States},
year = {Thu May 21 00:00:00 EDT 2015},
month = {Thu May 21 00:00:00 EDT 2015}
}
Web of Science
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Phase-Engineered PtSe 2 -Layered Films by a Plasma-Assisted Selenization Process toward All PtSe 2 -Based Field Effect Transistor to Highly Sensitive, Flexible, and Wide-Spectrum Photoresponse Photodetectors
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Temperature-dependent Raman spectroscopy and sensor applications of PtSe 2 nanosheets synthesized by wet chemistry
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Intrinsically patterned two-dimensional materials for selective adsorption of molecules and nanoclusters
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Vertically standing PtSe 2 film: a saturable absorber for a passively mode-locked Nd:LuVO 4 laser
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Visualization of point defects in ultrathin layered 1T-PtSe 2
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Controlled Doping of Wafer-Scale PtSe 2 Films for Device Application
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Review of mid-infrared mode-locked laser sources in the 2.0 μ m–3.5 μ m spectral region
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Few-Layered PtS 2 Phototransistor on h-BN with High Gain
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First-principles study on the gas sensing property of the Ge, As, and Br doped PtSe 2
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Van der Waals Heterostructures for High‐Performance Device Applications: Challenges and Opportunities
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Fast, Self-Driven, Air-Stable, and Broadband Photodetector Based on Vertically Aligned PtSe 2 /GaAs Heterojunction
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Inversion symmetry breaking induced triply degenerate points in orderly arranged PtSeTe family materials
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High-Electron-Mobility and Air-Stable 2D Layered PtSe 2 FETs
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Nonlinear Optical Signatures of the Transition from Semiconductor to Semimetal in PtSe 2
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In-situ fabrication of PtSe2/GaN heterojunction for self-powered deep ultraviolet photodetector with ultrahigh current on/off ratio and detectivity
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Tunable giant Rashba-type spin splitting in PtSe 2 /MoSe 2 heterostructure
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Thickness dependent electronic properties of Pt dichalcogenides
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Ultrafast Carrier Dynamics and Bandgap Renormalization in Layered PtSe 2
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Bulk-structured PtSe 2 for femtosecond fiber laser mode-locking
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Tunable electron-phonon coupling superconductivity in platinum diselenide
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Q-switched and mode-locked Er-doped fiber laser using PtSe 2 as a saturable absorber
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Ultrathin Layers of PdPX (X=S, Se): Two Dimensional Semiconductors for Photocatalytic Water Splitting
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Electrical devices from top-down structured platinum diselenide films
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Janus PtSSe and graphene heterostructure with tunable Schottky barrier
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Experimental evidence for type-II Dirac semimetal in
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Observation of negative longitudinal magnetoresistance in the type-II Dirac semimetal
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Controlled assembly of artificial 2D materials based on the transfer of oxo-functionalized graphene
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Controlled assembly of artificial 2D materials based on the transfer of oxo-functionalized graphene
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Low-Temperature Eutectic Synthesis of PtTe2 with Weak Antilocalization and Controlled Layer Thinning
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Experimental Progress on Layered Topological Semimetals
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PtSe2 grown directly on polymer foil for use as a robust piezoresistive sensor
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Van der Waals heterostructures for high-performance device applications: challenges and opportunities
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Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe2
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Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
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Monolayer PdSe2: A promising two-dimensional thermoelectric material
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Sensitivity Enhancement of a Surface Plasmon Resonance Sensor with Platinum Diselenide
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Temperature-dependent Raman spectroscopy and sensor applications of PtSe 2 nanosheets synthesized by wet chemistry
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