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Title: Perovskite-Fullerene Hybrid Materials Eliminate Hysteresis In Planar Diodes

Abstract

Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite–PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3 antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [1];  [2];  [1];  [1];  [1];  [3];  [1];  [4];  [4];  [3];  [2];  [1]
  1. Univ. of Toronto, ON (Canada)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Dalhousie Univ., Halifax, NS (Canada)
  4. Ewha Womans Univ., Seoul (Korea, Republic of)
Publication Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
1185807
Grant/Contract Number:  
AC05-00OR22725
Resource Type:
Accepted Manuscript
Journal Name:
Nature Communications
Additional Journal Information:
Journal Volume: 6; Journal ID: ISSN 2041-1723
Publisher:
Nature Publishing Group
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE

Citation Formats

Xu, Jixian, Buin, Andrei, Ip, Alexander H., Li, Wei, Voznyy, Oleksandr, Comin, Riccardo, Yuan, Mingjian, Jeon, Seokmin, Ning, Zhijun, McDowell, Jeffrey, Kanjanaboos, Pongsakorn, Sun, Jon-Paul, Lan, Xinzheng, Quan, Li Na, Kim, Dong Ha, Hill, Ian, Maksymovych, Petro, and Sargent, Edward H. Perovskite-Fullerene Hybrid Materials Eliminate Hysteresis In Planar Diodes. United States: N. p., 2015. Web. doi:10.1038/ncomms8081.
Xu, Jixian, Buin, Andrei, Ip, Alexander H., Li, Wei, Voznyy, Oleksandr, Comin, Riccardo, Yuan, Mingjian, Jeon, Seokmin, Ning, Zhijun, McDowell, Jeffrey, Kanjanaboos, Pongsakorn, Sun, Jon-Paul, Lan, Xinzheng, Quan, Li Na, Kim, Dong Ha, Hill, Ian, Maksymovych, Petro, & Sargent, Edward H. Perovskite-Fullerene Hybrid Materials Eliminate Hysteresis In Planar Diodes. United States. doi:10.1038/ncomms8081.
Xu, Jixian, Buin, Andrei, Ip, Alexander H., Li, Wei, Voznyy, Oleksandr, Comin, Riccardo, Yuan, Mingjian, Jeon, Seokmin, Ning, Zhijun, McDowell, Jeffrey, Kanjanaboos, Pongsakorn, Sun, Jon-Paul, Lan, Xinzheng, Quan, Li Na, Kim, Dong Ha, Hill, Ian, Maksymovych, Petro, and Sargent, Edward H. Tue . "Perovskite-Fullerene Hybrid Materials Eliminate Hysteresis In Planar Diodes". United States. doi:10.1038/ncomms8081. https://www.osti.gov/servlets/purl/1185807.
@article{osti_1185807,
title = {Perovskite-Fullerene Hybrid Materials Eliminate Hysteresis In Planar Diodes},
author = {Xu, Jixian and Buin, Andrei and Ip, Alexander H. and Li, Wei and Voznyy, Oleksandr and Comin, Riccardo and Yuan, Mingjian and Jeon, Seokmin and Ning, Zhijun and McDowell, Jeffrey and Kanjanaboos, Pongsakorn and Sun, Jon-Paul and Lan, Xinzheng and Quan, Li Na and Kim, Dong Ha and Hill, Ian and Maksymovych, Petro and Sargent, Edward H.},
abstractNote = {Solution-processed planar perovskite devices are highly desirable in a wide variety of optoelectronic applications; however, they are prone to hysteresis and current instabilities. Here we report the first perovskite–PCBM hybrid solid with significantly reduced hysteresis and recombination loss achieved in a single step. This new material displays an efficient electrically coupled microstructure: PCBM is homogeneously distributed throughout the film at perovskite grain boundaries. The PCBM passivates the key PbI3 antisite defects during the perovskite self-assembly, as revealed by theory and experiment. Photoluminescence transient spectroscopy proves that the PCBM phase promotes electron extraction. We showcase this mixed material in planar solar cells that feature low hysteresis and enhanced photovoltage. Using conductive AFM studies, we reveal the memristive properties of perovskite films. We close by positing that PCBM, by tying up both halide-rich antisites and unincorporated halides, reduces electric field-induced anion migration that may give rise to hysteresis and unstable diode behaviour.},
doi = {10.1038/ncomms8081},
journal = {Nature Communications},
number = ,
volume = 6,
place = {United States},
year = {2015},
month = {3}
}

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