Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures
Abstract
Semiconductor heterostructures provide a powerful platform to engineer the dynamics of excitons for fundamental and applied interests. However, the functionality of conventional semiconductor heterostructures is often limited by inefficient charge transfer across interfaces due to the interfacial imperfection caused by lattice mismatch. Here we demonstrate that MoS2/WS2 heterostructures consisting of monolayer MoS2 and WS2 stacked in the vertical direction can enable equally efficient interlayer exciton relaxation regardless the epitaxy and orientation of the stacking. This is manifested by a similar 2 orders of magnitude decrease of photoluminescence intensity in both epitaxial and nonepitaxial MoS2/WS2 heterostructures. Both heterostructures also show similarly improved absorption beyond the simple superimposition of the absorptions of monolayer MoS2 and WS2. Our result indicates that 2D heterostructures bear significant implications for the development of photonic devices, in particular those requesting efficient exciton separation and strong light absorption, such as solar cells, photodetectors, modulators, and photocatalysts. Furthermore, it also suggests that the simple stacking of dissimilar 2D materials with random orientations is a viable strategy to fabricate complex functional 2D heterostructures, which would show similar optical functionality as the counterpart with perfect epitaxy.
- Authors:
-
- North Carolina State Univ., Raleigh, NC (United States)
- Univ. of North Carolina, Charlotte Hill, NC (United States)
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- North Carolina State University
- Publication Date:
- Research Org.:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Org.:
- USDOE Office of Science (SC)
- OSTI Identifier:
- 1185466
- Alternate Identifier(s):
- OSTI ID: 1329124
- Grant/Contract Number:
- AC05-00OR22725
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Nano Letters
- Additional Journal Information:
- Journal Volume: 15; Journal ID: ISSN 1530-6984
- Publisher:
- American Chemical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; Molybdenum disulfide; tungsten disulfide; van der Waals epitaxy; interlayer charge transfer; two-dimensional heterojunction
Citation Formats
Yu, Yifei, Hu, Shi, Su, Liqin, Huang, Lujun, Liu, Yi, Jin, Zhenghe, Puretzky, Alexander A., Geohegan, David B., Kim, Ki Wook, Zhang, Yong, and Cao, Linyou. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures. United States: N. p., 2014.
Web. doi:10.1021/nl5038177.
Yu, Yifei, Hu, Shi, Su, Liqin, Huang, Lujun, Liu, Yi, Jin, Zhenghe, Puretzky, Alexander A., Geohegan, David B., Kim, Ki Wook, Zhang, Yong, & Cao, Linyou. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures. United States. https://doi.org/10.1021/nl5038177
Yu, Yifei, Hu, Shi, Su, Liqin, Huang, Lujun, Liu, Yi, Jin, Zhenghe, Puretzky, Alexander A., Geohegan, David B., Kim, Ki Wook, Zhang, Yong, and Cao, Linyou. Wed .
"Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures". United States. https://doi.org/10.1021/nl5038177. https://www.osti.gov/servlets/purl/1185466.
@article{osti_1185466,
title = {Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures},
author = {Yu, Yifei and Hu, Shi and Su, Liqin and Huang, Lujun and Liu, Yi and Jin, Zhenghe and Puretzky, Alexander A. and Geohegan, David B. and Kim, Ki Wook and Zhang, Yong and Cao, Linyou},
abstractNote = {Semiconductor heterostructures provide a powerful platform to engineer the dynamics of excitons for fundamental and applied interests. However, the functionality of conventional semiconductor heterostructures is often limited by inefficient charge transfer across interfaces due to the interfacial imperfection caused by lattice mismatch. Here we demonstrate that MoS2/WS2 heterostructures consisting of monolayer MoS2 and WS2 stacked in the vertical direction can enable equally efficient interlayer exciton relaxation regardless the epitaxy and orientation of the stacking. This is manifested by a similar 2 orders of magnitude decrease of photoluminescence intensity in both epitaxial and nonepitaxial MoS2/WS2 heterostructures. Both heterostructures also show similarly improved absorption beyond the simple superimposition of the absorptions of monolayer MoS2 and WS2. Our result indicates that 2D heterostructures bear significant implications for the development of photonic devices, in particular those requesting efficient exciton separation and strong light absorption, such as solar cells, photodetectors, modulators, and photocatalysts. Furthermore, it also suggests that the simple stacking of dissimilar 2D materials with random orientations is a viable strategy to fabricate complex functional 2D heterostructures, which would show similar optical functionality as the counterpart with perfect epitaxy.},
doi = {10.1021/nl5038177},
journal = {Nano Letters},
number = ,
volume = 15,
place = {United States},
year = {Wed Dec 03 00:00:00 EST 2014},
month = {Wed Dec 03 00:00:00 EST 2014}
}
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