Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

Black, Dolores Archuleta; Robinson, William H.; Wilcox, Ian Zachary; Limbrick, Daniel B.; Black, Jeffrey D.

doi:10.1109/TNS.2015.2449073

Title: Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

Abstract

Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. Furthermore, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.

Authors:

Black, Dolores Archuleta ^[1]; Robinson, William H. ^[2]; Wilcox, Ian Zachary ^[1]; Limbrick, Daniel B. ^[3]; Black, Jeffrey D. ^[1]

Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Vanderbilt Univ., Nashville, TN (United States)
North Carolina A&T State Univ., Greensboro, NC (United States)

Publication Date:: Fri Aug 07 00:00:00 EDT 2015

Research Org.:: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Org.:: USDOE National Nuclear Security Administration (NNSA)

OSTI Identifier:: 1184992

Alternate Identifier(s):: OSTI ID: 1237663

Report Number(s):: SAND-2014-20130J; SAND-2015-5187J
Journal ID: ISSN 0018-9499; 547465

Grant/Contract Number:: AC04-94AL85000

Resource Type:: Accepted Manuscript

Journal Name:: IEEE Transactions on Nuclear Science

Additional Journal Information:: Journal Volume: 62; Journal Issue: 4; Journal ID: ISSN 0018-9499

Publisher:: Institute of Electrical and Electronics Engineers (IEEE)

Country of Publication:: United States

Language:: English

Subject:: 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; circuit simulation; combinatorial circuits; integrated circuit modeling; logic cells; semiconductor device modeling; radiation effects; combinational circuits

Citation Formats


                    Black, Dolores Archuleta, Robinson, William H., Wilcox, Ian Zachary, Limbrick, Daniel B., and Black, Jeffrey D. Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization.  United States: N. p., 2015. 
Web.  doi:10.1109/TNS.2015.2449073.

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                    Black, Dolores Archuleta, Robinson, William H., Wilcox, Ian Zachary, Limbrick, Daniel B., & Black, Jeffrey D. Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization.  United States.  https://doi.org/10.1109/TNS.2015.2449073

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                    Black, Dolores Archuleta, Robinson, William H., Wilcox, Ian Zachary, Limbrick, Daniel B., and Black, Jeffrey D. Fri .  
"Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization".  United States.  https://doi.org/10.1109/TNS.2015.2449073.  https://www.osti.gov/servlets/purl/1184992.

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@article{osti_1184992,

  title        = {Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization},

  author       = {Black, Dolores Archuleta and Robinson, William H. and Wilcox, Ian Zachary and Limbrick, Daniel B. and Black, Jeffrey D.},

  abstractNote = {Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. Furthermore, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.},

  doi          = {10.1109/TNS.2015.2449073},

  journal      = {IEEE Transactions on Nuclear Science},

  number       = 4,

  volume       = 62,

  place        = {United States},

  year         = {Fri Aug 07 00:00:00 EDT 2015},

  month        = {Fri Aug 07 00:00:00 EDT 2015}

}

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Works referencing / citing this record:

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Title: Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

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