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Title: Modeling of single event transients with dual double-exponential current sources: Implications for logic cell characterization

Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. Likewise, an accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. Furthermore, a small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. As a result, the parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.
 [1] ;  [2] ;  [1] ;  [3] ;  [1]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Vanderbilt Univ., Nashville, TN (United States)
  3. North Carolina A&T State Univ., Greensboro, NC (United States)
Publication Date:
Report Number(s):
SAND-2014-20130J; SAND-2015-5187J
Journal ID: ISSN 0018-9499; 547465
Grant/Contract Number:
Accepted Manuscript
Journal Name:
IEEE Transactions on Nuclear Science
Additional Journal Information:
Journal Volume: 62; Journal Issue: 4; Journal ID: ISSN 0018-9499
Institute of Electrical and Electronics Engineers (IEEE)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; circuit simulation; combinatorial circuits; integrated circuit modeling; logic cells; semiconductor device modeling; radiation effects; combinational circuits
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1237663