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Title: Ion beam modification of topological insulator bismuth selenide

In this study, we demonstrate chemical doping of a topological insulator Bi 2Se 3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi 2Se 3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi 2Se 3, a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.
 [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [2] ;  [2] ;  [3] ;  [3] ;  [3]
  1. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  2. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
  3. The State Univ. of New Jersey, Piscataway, NJ (United States)
Publication Date:
Report Number(s):
Journal ID: ISSN 0003-6951; APPLAB; 540398
Grant/Contract Number:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 24; Journal ID: ISSN 0003-6951
American Institute of Physics (AIP)
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Laboratories, Livermore, CA (United States)
Sponsoring Org:
USDOE National Nuclear Security Administration (NNSA)
Country of Publication:
United States
36 MATERIALS SCIENCE; ion implantation; doping; insulators; transmission electron microscopy; carrier density
OSTI Identifier: