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Title: First-principles simulations of a graphene-based field-effect transistor

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1184436
Grant/Contract Number:  
FG02-02ER45995
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Volume: 91 Journal Issue: 24; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Wang, Yun-Peng, and Cheng, Hai-Ping. First-principles simulations of a graphene-based field-effect transistor. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.245307.
Wang, Yun-Peng, & Cheng, Hai-Ping. First-principles simulations of a graphene-based field-effect transistor. United States. https://doi.org/10.1103/PhysRevB.91.245307
Wang, Yun-Peng, and Cheng, Hai-Ping. Fri . "First-principles simulations of a graphene-based field-effect transistor". United States. https://doi.org/10.1103/PhysRevB.91.245307.
@article{osti_1184436,
title = {First-principles simulations of a graphene-based field-effect transistor},
author = {Wang, Yun-Peng and Cheng, Hai-Ping},
abstractNote = {},
doi = {10.1103/PhysRevB.91.245307},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 24,
volume = 91,
place = {United States},
year = {2015},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.91.245307

Citation Metrics:
Cited by: 14 works
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