First-principles simulations of a graphene-based field-effect transistor

Wang, Yun-Peng; Cheng, Hai-Ping

doi:10.1103/PhysRevB.91.245307

Title: First-principles simulations of a graphene-based field-effect transistor

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Authors:: Wang, Yun-Peng; Cheng, Hai-Ping

Publication Date:: 2015-06-12

Sponsoring Org.:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

OSTI Identifier:: 1184436

Grant/Contract Number:: FG02-02ER45995

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 91; Journal Issue: 24; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Wang, Yun-Peng, and Cheng, Hai-Ping. First-principles simulations of a graphene-based field-effect transistor.  United States: N. p., 2015. 
Web.  doi:10.1103/PhysRevB.91.245307.

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                    Wang, Yun-Peng, & Cheng, Hai-Ping. First-principles simulations of a graphene-based field-effect transistor.  United States.  https://doi.org/10.1103/PhysRevB.91.245307

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                    Wang, Yun-Peng, and Cheng, Hai-Ping. Fri .  
"First-principles simulations of a graphene-based field-effect transistor".  United States.  https://doi.org/10.1103/PhysRevB.91.245307.

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@article{osti_1184436,

  title        = {First-principles simulations of a graphene-based field-effect transistor},

  author       = {Wang, Yun-Peng and Cheng, Hai-Ping},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.91.245307},

  journal      = {Physical Review B},

  number       = 24,

  volume       = 91,

  place        = {United States},

  year         = {2015},

  month        = {6}

}

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