First-principles simulations of a graphene-based field-effect transistor
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1184436
- Grant/Contract Number:
- FG02-02ER45995
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 91; Journal Issue: 24; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Wang, Yun-Peng, and Cheng, Hai-Ping. First-principles simulations of a graphene-based field-effect transistor. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.91.245307.
Wang, Yun-Peng, & Cheng, Hai-Ping. First-principles simulations of a graphene-based field-effect transistor. United States. https://doi.org/10.1103/PhysRevB.91.245307
Wang, Yun-Peng, and Cheng, Hai-Ping. Fri .
"First-principles simulations of a graphene-based field-effect transistor". United States. https://doi.org/10.1103/PhysRevB.91.245307.
@article{osti_1184436,
title = {First-principles simulations of a graphene-based field-effect transistor},
author = {Wang, Yun-Peng and Cheng, Hai-Ping},
abstractNote = {},
doi = {10.1103/PhysRevB.91.245307},
journal = {Physical Review B},
number = 24,
volume = 91,
place = {United States},
year = {2015},
month = {6}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.91.245307
https://doi.org/10.1103/PhysRevB.91.245307
Other availability
Cited by: 6 works
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