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Title: Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice

Abstract

We report on electronic transport measurements of dual-gated nanodevices of the low-carrier density topological insulator (TI) B i1.5Sb 0.5Te 1.7Se 1.3. In all devices, the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between the surface states. A charging model allows us to use the penetrating electric field as a measurement of the intersurface capacitance C TI and the surface state energy-density relationship $μ(n)$, which is found to be consistent with independent angle-resolved photoemission spectroscopy measurements. At high magnetic fields, increased field penetration through the surface states is observed, strongly suggestive of the opening of a surface state band gap due to broken time-reversal symmetry.

Authors:
 [1];  [1];  [2];  [1];  [1];  [3];  [4];  [4];  [1];  [1];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  2. Hebrew Univ. of Jerusalem (Israel). Racah Inst. of Physics; Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  3. National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States). Center for Neutron Research; Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Univ. of Maryland, College Park, MD (United States). Dept. of Physics, Center for Nanophysics and Advanced Materials
  4. National Inst. for Materials Science (NIMS), Tsukuba (Japan). Advanced Materials Lab.
Publication Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
1184091
Alternate Identifier(s):
OSTI ID: 1181193
Report Number(s):
LLNL-JRNL-653845
Journal ID: ISSN 0031-9007; PRLTAO
Grant/Contract Number:  
AC52-07NA27344; SC0006418
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 20; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Fatemi, Valla, Hunt, Benjamin, Steinberg, Hadar, Eltinge, Stephen L., Mahmood, Fahad, Butch, Nicholas P., Watanabe, Kenji, Taniguchi, Takashi, Gedik, Nuh, Ashoori, Raymond C., and Jarillo-Herrero, Pablo. Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice. United States: N. p., 2014. Web. doi:10.1103/PhysRevLett.113.206801.
Fatemi, Valla, Hunt, Benjamin, Steinberg, Hadar, Eltinge, Stephen L., Mahmood, Fahad, Butch, Nicholas P., Watanabe, Kenji, Taniguchi, Takashi, Gedik, Nuh, Ashoori, Raymond C., & Jarillo-Herrero, Pablo. Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice. United States. doi:10.1103/PhysRevLett.113.206801.
Fatemi, Valla, Hunt, Benjamin, Steinberg, Hadar, Eltinge, Stephen L., Mahmood, Fahad, Butch, Nicholas P., Watanabe, Kenji, Taniguchi, Takashi, Gedik, Nuh, Ashoori, Raymond C., and Jarillo-Herrero, Pablo. Sat . "Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice". United States. doi:10.1103/PhysRevLett.113.206801. https://www.osti.gov/servlets/purl/1184091.
@article{osti_1184091,
title = {Electrostatic Coupling between Two Surfaces of a Topological Insulator Nanodevice},
author = {Fatemi, Valla and Hunt, Benjamin and Steinberg, Hadar and Eltinge, Stephen L. and Mahmood, Fahad and Butch, Nicholas P. and Watanabe, Kenji and Taniguchi, Takashi and Gedik, Nuh and Ashoori, Raymond C. and Jarillo-Herrero, Pablo},
abstractNote = {We report on electronic transport measurements of dual-gated nanodevices of the low-carrier density topological insulator (TI) Bi1.5Sb0.5Te1.7Se1.3. In all devices, the upper and lower surface states are independently tunable to the Dirac point by the top and bottom gate electrodes. In thin devices, electric fields are found to penetrate through the bulk, indicating finite capacitive coupling between the surface states. A charging model allows us to use the penetrating electric field as a measurement of the intersurface capacitance CTI and the surface state energy-density relationship $μ(n)$, which is found to be consistent with independent angle-resolved photoemission spectroscopy measurements. At high magnetic fields, increased field penetration through the surface states is observed, strongly suggestive of the opening of a surface state band gap due to broken time-reversal symmetry.},
doi = {10.1103/PhysRevLett.113.206801},
journal = {Physical Review Letters},
number = 20,
volume = 113,
place = {United States},
year = {2014},
month = {11}
}

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Works referenced in this record:

Colloquium: Topological insulators
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p-type Bi2Se3 for topological insulator and low-temperature thermoelectric applications
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