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Title: Enhanced power factor of higher manganese silicide via melt spin synthesis method

We report on the thermoelectric properties of the Higher Manganese Silicide MnSi₁.₇₅ (HMS) synthesized by means of a one-step non-equilibrium method. The ultrahigh cooling rate generated from the melt-spin technique is found to be effective in reducing second phases, which are inevitable during the traditional solid state diffusion processes. Aside from being detrimental to thermoelectric properties, second phases skew the revealing of the intrinsic properties of this class of materials, for example the optimal level of carrier concentration. With this melt-spin sample, we are able to formulate a simple model based on a single parabolic band that can well describe the carrier concentration dependence of the Seebeck coefficient and power factor of the data reported in the literature. An optimal carrier concentration around 5x10²⁰ cm⁻³ at 300 K is predicted according to this model. The phase-pure melt-spin sample shows the largest power factor at high temperature, resulting in the highest zT value among the three samples in this paper; the maximum value is superior to those reported in the literatures.
 [1] ;  [2] ;  [2] ;  [2] ;  [2] ;  [1]
  1. Brookhaven National Lab. (BNL), Upton, NY (United States)
  2. Chinese Academy of Sciences, Shanghai (China)
Publication Date:
Report Number(s):
Journal ID: ISSN 0021-8979; JAPIAU; R&D Project: MA012MABA; KC0202050; TRN: US1500510
Grant/Contract Number:
SC00112704; DEAC0298CH10886
Accepted Manuscript
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 116; Journal Issue: 24; Journal ID: ISSN 0021-8979
American Institute of Physics (AIP)
Research Org:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; carrier density; materials properties; powders; electrical resistivity; materials quenching
OSTI Identifier:
Alternate Identifier(s):
OSTI ID: 1226652