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Title: Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices

In our paper, we demonstrate the growth of ordered arrays of nonpolar {101 ¯ 0} core–shell nanowalls and semipolar {101 ¯ 1} core–shell pyramidal nanostripes on c-plane (0001) sapphire substrates using selective-area epitaxy and metal organic chemical vapor deposition. The nanostructure arrays are controllably patterned into LED mesa regions, demonstrating a technique to impart secondary lithography features into the arrays. Moreover, we study the dependence of the nanostructure cores on the epitaxial growth conditions and show that the geometry and morphology are strongly influenced by growth temperature, V/III ratio, and pulse interruption time. We also demonstrate the growth of InGaN quantum well shells on the nanostructures and characterize the structures by using micro-photoluminescence and cross-section scanning tunneling electron microscopy.
Authors:
 [1] ;  [2] ;  [1] ;  [1] ;  [1] ;  [1] ;  [3] ;  [1] ;  [1]
  1. Univ. of New Mexico, Albuquerque, NM (United States)
  2. Univ. of New Mexico, Albuquerque, NM (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
  3. Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Publication Date:
Report Number(s):
SAND2014-16968J
Journal ID: ISSN 1543-186X; 536917
Grant/Contract Number:
AC04-94AL85000
Type:
Accepted Manuscript
Journal Name:
Journal of Electronic Materials (Online)
Additional Journal Information:
Journal Name: Journal of Electronic Materials (Online); Journal Volume: 44; Journal Issue: 5; Journal ID: ISSN 1543-186X
Publisher:
Springer
Research Org:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org:
National Science Foundation (NSF), Arlington, VA (United States)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; gallium nitride; nonpolar; semipolar; nanostructures; selective area epitaxy; nanowalls; pyramidal nanostripes; LED; MOCVD
OSTI Identifier:
1183096

Rishinaramangalam, Ashwin K., Mishkat Ul Masabih, Saadat, Fairchild, Michael N., Wright, Jeremy Benjamin, Shima, Darryl M., Balakrishnan, Ganesh, Brener, Igal, Brueck, Steven R.J., and Feezell, Daniel F.. Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices. United States: N. p., Web. doi:10.1007/s11664-014-3456-z.
Rishinaramangalam, Ashwin K., Mishkat Ul Masabih, Saadat, Fairchild, Michael N., Wright, Jeremy Benjamin, Shima, Darryl M., Balakrishnan, Ganesh, Brener, Igal, Brueck, Steven R.J., & Feezell, Daniel F.. Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices. United States. doi:10.1007/s11664-014-3456-z.
Rishinaramangalam, Ashwin K., Mishkat Ul Masabih, Saadat, Fairchild, Michael N., Wright, Jeremy Benjamin, Shima, Darryl M., Balakrishnan, Ganesh, Brener, Igal, Brueck, Steven R.J., and Feezell, Daniel F.. 2014. "Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices". United States. doi:10.1007/s11664-014-3456-z. https://www.osti.gov/servlets/purl/1183096.
@article{osti_1183096,
title = {Controlled Growth of Ordered III-Nitride Core-Shell Nanostructure Arrays for Visible Optoelectronic Devices},
author = {Rishinaramangalam, Ashwin K. and Mishkat Ul Masabih, Saadat and Fairchild, Michael N. and Wright, Jeremy Benjamin and Shima, Darryl M. and Balakrishnan, Ganesh and Brener, Igal and Brueck, Steven R.J. and Feezell, Daniel F.},
abstractNote = {In our paper, we demonstrate the growth of ordered arrays of nonpolar {101 ¯ 0} core–shell nanowalls and semipolar {101 ¯ 1} core–shell pyramidal nanostripes on c-plane (0001) sapphire substrates using selective-area epitaxy and metal organic chemical vapor deposition. The nanostructure arrays are controllably patterned into LED mesa regions, demonstrating a technique to impart secondary lithography features into the arrays. Moreover, we study the dependence of the nanostructure cores on the epitaxial growth conditions and show that the geometry and morphology are strongly influenced by growth temperature, V/III ratio, and pulse interruption time. We also demonstrate the growth of InGaN quantum well shells on the nanostructures and characterize the structures by using micro-photoluminescence and cross-section scanning tunneling electron microscopy.},
doi = {10.1007/s11664-014-3456-z},
journal = {Journal of Electronic Materials (Online)},
number = 5,
volume = 44,
place = {United States},
year = {2014},
month = {10}
}