Two-dimensional electron gas in monolayer InN quantum wells
Abstract
We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.
- Authors:
-
- Sandia National Laboratories, Albuquerque, NM (United States)
- Boston Univ., Boston, MA (United States)
- Princeton Univ., NJ (United States)
- Publication Date:
- Research Org.:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1183081
- Report Number(s):
- SAND2014-16698J
Journal ID: ISSN 0003-6951; APPLAB; 534591
- Grant/Contract Number:
- AC04-94AL85000
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Applied Physics Letters
- Additional Journal Information:
- Journal Volume: 105; Journal Issue: 21; Journal ID: ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Pan, Wei, Dimakis, Emmanouil, Wang, George T., Moustakas, Theodore D., and Tsui, Daniel C. Two-dimensional electron gas in monolayer InN quantum wells. United States: N. p., 2014.
Web. doi:10.1063/1.4902916.
Pan, Wei, Dimakis, Emmanouil, Wang, George T., Moustakas, Theodore D., & Tsui, Daniel C. Two-dimensional electron gas in monolayer InN quantum wells. United States. https://doi.org/10.1063/1.4902916
Pan, Wei, Dimakis, Emmanouil, Wang, George T., Moustakas, Theodore D., and Tsui, Daniel C. Mon .
"Two-dimensional electron gas in monolayer InN quantum wells". United States. https://doi.org/10.1063/1.4902916. https://www.osti.gov/servlets/purl/1183081.
@article{osti_1183081,
title = {Two-dimensional electron gas in monolayer InN quantum wells},
author = {Pan, Wei and Dimakis, Emmanouil and Wang, George T. and Moustakas, Theodore D. and Tsui, Daniel C.},
abstractNote = {We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.},
doi = {10.1063/1.4902916},
journal = {Applied Physics Letters},
number = 21,
volume = 105,
place = {United States},
year = {Mon Nov 24 00:00:00 EST 2014},
month = {Mon Nov 24 00:00:00 EST 2014}
}
Free Publicly Available Full Text
Publisher's Version of Record
Other availability
Cited by: 17 works
Citation information provided by
Web of Science
Web of Science
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
Unusual properties of the fundamental band gap of InN
journal, May 2002
- Wu, J.; Walukiewicz, W.; Yu, K. M.
- Applied Physics Letters, Vol. 80, Issue 21
Optical properties of InN—the bandgap question
journal, July 2005
- Monemar, B.; Paskov, P. P.; Kasic, A.
- Superlattices and Microstructures, Vol. 38, Issue 1
When group-III nitrides go infrared: New properties and perspectives
journal, July 2009
- Wu, Junqiao
- Journal of Applied Physics, Vol. 106, Issue 1
Recent advances in wide bandgap semiconductor biological and gas sensors
journal, January 2010
- Pearton, S. J.; Ren, F.; Wang, Yu-Lin
- Progress in Materials Science, Vol. 55, Issue 1
Polarization-Driven Topological Insulator Transition in a Quantum Well
journal, November 2012
- Miao, M. S.; Yan, Q.; Van de Walle, C. G.
- Physical Review Letters, Vol. 109, Issue 18
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
journal, December 2006
- Bernevig, B. A.; Hughes, T. L.; Zhang, S.-C.
- Science, Vol. 314, Issue 5806, p. 1757-1761
Quantum Spin Hall Insulator State in HgTe Quantum Wells
journal, November 2007
- Konig, M.; Wiedmann, S.; Brune, C.
- Science, Vol. 318, Issue 5851, p. 766-770
Quantum Spin Hall Effect in Inverted Type-II Semiconductors
journal, June 2008
- Liu, Chaoxing; Hughes, Taylor L.; Qi, Xiao-Liang
- Physical Review Letters, Vol. 100, Issue 23
Evidence for Helical Edge Modes in Inverted Quantum Wells
journal, September 2011
- Knez, Ivan; Du, Rui-Rui; Sullivan, Gerard
- Physical Review Letters, Vol. 107, Issue 13
Heteroepitaxial growth of In-face InN on GaN (0001) by plasma-assisted molecular-beam epitaxy
journal, June 2005
- Dimakis, E.; Iliopoulos, E.; Tsagaraki, K.
- Journal of Applied Physics, Vol. 97, Issue 11
Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix
journal, February 2007
- Yoshikawa, A.; Che, S. B.; Yamaguchi, W.
- Applied Physics Letters, Vol. 90, Issue 7
Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells
journal, May 2008
- Dimakis, E.; Nikiforov, A. Yu.; Thomidis, C.
- physica status solidi (a), Vol. 205, Issue 5
Observation of an inverted band structure near the surface of InN
journal, July 2008
- Colakerol, L.; Piper, L. F. J.; Fedorov, A.
- EPL (Europhysics Letters), Vol. 83, Issue 4
(Invited) Experimental Evidence that the Plasma-Assisted MBE Growth of Nitride Alloys is a Liquid Phase Epitaxy Process
journal, April 2011
- Moustakas, Theodore D.; Bhattacharyya, Anirban
- ECS Transactions, Vol. 35, Issue 6
The role of liquid phase epitaxy during growth of AlGaN by MBE
journal, December 2011
- Moustakas, Theodore D.; Bhattacharyya, Anirban
- physica status solidi (c), Vol. 9, Issue 3-4
Electronic structure of a single-layer InN quantum well in a GaN matrix
journal, March 2013
- Miao, M. S.; Yan, Q. M.; Van de Walle, C. G.
- Applied Physics Letters, Vol. 102, Issue 10
Photoluminescence and pressure effects in short period InN/ n GaN superlattices
journal, March 2013
- Staszczak, G.; Gorczyca, I.; Suski, T.
- Journal of Applied Physics, Vol. 113, Issue 12
Electronic properties of two-dimensional systems
journal, April 1982
- Ando, Tsuneya; Fowler, Alan B.; Stern, Frank
- Reviews of Modern Physics, Vol. 54, Issue 2
Growth Optimization of an Electron Confining InN/GaN Quantum Well Heterostructure
journal, January 2007
- Dimakis, E.; Iliopoulos, E.; Kayambaki, M.
- Journal of Electronic Materials, Vol. 36, Issue 4
Suppression of the magneto resistance in high electric fields of polyacetylene nanofibers
journal, June 2010
- Choi, A.; Lee, H. J.; Kaiser, A. B.
- Synthetic Metals, Vol. 160, Issue 11-12
The role of dislocation-induced scattering in electronic transport in GaxIn1-xN alloys
journal, January 2012
- Donmez, Omer; Gunes, Mustafa; Erol, Ayse
- Nanoscale Research Letters, Vol. 7, Issue 1
Temperature dependence of the resistance of a two-dimensional topological insulator in a HgTe quantum well
journal, March 2014
- Gusev, G. M.; Kvon, Z. D.; Olshanetsky, E. B.
- Physical Review B, Vol. 89, Issue 12
Low-temperature surface conduction in the Kondo insulator SmB
journal, November 2013
- Wolgast, Steven; Kurdak, Çağlıyan; Sun, Kai
- Physical Review B, Vol. 88, Issue 18
Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells
journal, September 2013
- Zhou, Lin; Dimakis, E.; Hathwar, R.
- Physical Review B, Vol. 88, Issue 12
Works referencing / citing this record:
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
journal, April 2017
- Ma, Dingyu; Rong, Xin; Zheng, Xiantong
- Scientific Reports, Vol. 7, Issue 1