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Title: Two-dimensional electron gas in monolayer InN quantum wells

Abstract

We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.

Authors:
 [1];  [2];  [1];  [2];  [3]
  1. Sandia National Laboratories, Albuquerque, NM (United States)
  2. Boston Univ., Boston, MA (United States)
  3. Princeton Univ., NJ (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1183081
Report Number(s):
SAND2014-16698J
Journal ID: ISSN 0003-6951; APPLAB; 534591
Grant/Contract Number:  
AC04-94AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY

Citation Formats

Pan, Wei, Dimakis, Emmanouil, Wang, George T., Moustakas, Theodore D., and Tsui, Daniel C. Two-dimensional electron gas in monolayer InN quantum wells. United States: N. p., 2014. Web. doi:10.1063/1.4902916.
Pan, Wei, Dimakis, Emmanouil, Wang, George T., Moustakas, Theodore D., & Tsui, Daniel C. Two-dimensional electron gas in monolayer InN quantum wells. United States. https://doi.org/10.1063/1.4902916
Pan, Wei, Dimakis, Emmanouil, Wang, George T., Moustakas, Theodore D., and Tsui, Daniel C. Mon . "Two-dimensional electron gas in monolayer InN quantum wells". United States. https://doi.org/10.1063/1.4902916. https://www.osti.gov/servlets/purl/1183081.
@article{osti_1183081,
title = {Two-dimensional electron gas in monolayer InN quantum wells},
author = {Pan, Wei and Dimakis, Emmanouil and Wang, George T. and Moustakas, Theodore D. and Tsui, Daniel C.},
abstractNote = {We report in this letter experimental results that confirm the two-dimensional nature of the electron systems in monolayer InN quantum wells embedded in GaN barriers. The electron density and mobility of the two-dimensional electron system (2DES) in these InN quantum wells are 5×1015 cm-2 and 420 cm2 /Vs, respectively. Moreover, the diagonal resistance of the 2DES shows virtually no temperature dependence in a wide temperature range, indicating the topological nature of the 2DES.},
doi = {10.1063/1.4902916},
journal = {Applied Physics Letters},
number = 21,
volume = 105,
place = {United States},
year = {Mon Nov 24 00:00:00 EST 2014},
month = {Mon Nov 24 00:00:00 EST 2014}
}

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Cited by: 17 works
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Works referencing / citing this record:

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
journal, April 2017

  • Ma, Dingyu; Rong, Xin; Zheng, Xiantong
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