Acceptors in ZnO
Abstract
Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence shows that these point defects have acceptor levels 3.2, 1.5, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO2 contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals has been attributed to an acceptor, which may involve a zinc vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g = 2.0033 and g = 2.0075, along with an isotropic center at g = 2.0053.
- Authors:
- Publication Date:
- Research Org.:
- Pacific Northwest National Lab. (PNNL), Richland, WA (United States). Environmental Molecular Sciences Lab. (EMSL)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1182904
- Report Number(s):
- PNNL-SA-104602
47648; 42310; KP1704020
- Grant/Contract Number:
- AC05-76RL01830
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Journal of Applied Physics, 117(11):Article No. 112802
- Additional Journal Information:
- Journal Name: Journal of Applied Physics, 117(11):Article No. 112802
- Country of Publication:
- United States
- Language:
- English
- Subject:
- Environmental Molecular Sciences Laboratory
Citation Formats
Mccluskey, Matthew D., Corolewski, Caleb, Lv, Jinpeng, Tarun, Marianne C., Teklemichael, Samuel T., Walter, Eric D., Norton, M. G., Harrison, Kale W., and Ha, Su Y. Acceptors in ZnO. United States: N. p., 2015.
Web. doi:10.1063/1.4913827.
Mccluskey, Matthew D., Corolewski, Caleb, Lv, Jinpeng, Tarun, Marianne C., Teklemichael, Samuel T., Walter, Eric D., Norton, M. G., Harrison, Kale W., & Ha, Su Y. Acceptors in ZnO. United States. https://doi.org/10.1063/1.4913827
Mccluskey, Matthew D., Corolewski, Caleb, Lv, Jinpeng, Tarun, Marianne C., Teklemichael, Samuel T., Walter, Eric D., Norton, M. G., Harrison, Kale W., and Ha, Su Y. Sat .
"Acceptors in ZnO". United States. https://doi.org/10.1063/1.4913827. https://www.osti.gov/servlets/purl/1182904.
@article{osti_1182904,
title = {Acceptors in ZnO},
author = {Mccluskey, Matthew D. and Corolewski, Caleb and Lv, Jinpeng and Tarun, Marianne C. and Teklemichael, Samuel T. and Walter, Eric D. and Norton, M. G. and Harrison, Kale W. and Ha, Su Y.},
abstractNote = {Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence shows that these point defects have acceptor levels 3.2, 1.5, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO2 contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals has been attributed to an acceptor, which may involve a zinc vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g = 2.0033 and g = 2.0075, along with an isotropic center at g = 2.0053.},
doi = {10.1063/1.4913827},
journal = {Journal of Applied Physics, 117(11):Article No. 112802},
number = ,
volume = ,
place = {United States},
year = {Sat Mar 21 00:00:00 EDT 2015},
month = {Sat Mar 21 00:00:00 EDT 2015}
}
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