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Title: g -factor modification in a bulk InGaAs epilayer by an in-plane electric field

Authors:
; ; ; ;
Publication Date:
Grant/Contract Number:
SC0000957
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 91; Journal Issue: 20; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1182850

Luengo-Kovac, M., Macmahon, M., Huang, S., Goldman, R. S., and Sih, V.. g -factor modification in a bulk InGaAs epilayer by an in-plane electric field. United States: N. p., Web. doi:10.1103/PhysRevB.91.201110.
Luengo-Kovac, M., Macmahon, M., Huang, S., Goldman, R. S., & Sih, V.. g -factor modification in a bulk InGaAs epilayer by an in-plane electric field. United States. doi:10.1103/PhysRevB.91.201110.
Luengo-Kovac, M., Macmahon, M., Huang, S., Goldman, R. S., and Sih, V.. 2015. "g -factor modification in a bulk InGaAs epilayer by an in-plane electric field". United States. doi:10.1103/PhysRevB.91.201110.
@article{osti_1182850,
title = {g -factor modification in a bulk InGaAs epilayer by an in-plane electric field},
author = {Luengo-Kovac, M. and Macmahon, M. and Huang, S. and Goldman, R. S. and Sih, V.},
abstractNote = {},
doi = {10.1103/PhysRevB.91.201110},
journal = {Physical Review B},
number = 20,
volume = 91,
place = {United States},
year = {2015},
month = {5}
}