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Title: Conduction at a ferroelectric interface

Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.
Authors:
 [1] ;  [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [1] ;  [1] ;  [1]
  1. Yale Univ., New Haven, CT (United States)
  2. Brookhaven National Lab. (BNL), Upton, NY (United States)
Publication Date:
Report Number(s):
BNL-107264-2014-JA
Journal ID: ISSN 2331-7019; PRAHB2; R&D Project: MA015MACA; KC0201010
Grant/Contract Number:
SC00112704; AC02-98CH10886
Type:
Accepted Manuscript
Journal Name:
Physical Review Applied
Additional Journal Information:
Journal Volume: 2; Journal Issue: 5; Journal ID: ISSN 2331-7019
Publisher:
American Physical Society
Research Org:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
OSTI Identifier:
1182478
Alternate Identifier(s):
OSTI ID: 1181416

Marshall, Matthew S. J., Malashevich, Andrei, Disa, Ankit S., Han, Myung -Geun, Chen, Hanghui, Zhu, Yimei, Ismail-Beigi, Sohrab, Walker, Frederick J., and Ahn, Charles H.. Conduction at a ferroelectric interface. United States: N. p., Web. doi:10.1103/PhysRevApplied.2.051001.
Marshall, Matthew S. J., Malashevich, Andrei, Disa, Ankit S., Han, Myung -Geun, Chen, Hanghui, Zhu, Yimei, Ismail-Beigi, Sohrab, Walker, Frederick J., & Ahn, Charles H.. Conduction at a ferroelectric interface. United States. doi:10.1103/PhysRevApplied.2.051001.
Marshall, Matthew S. J., Malashevich, Andrei, Disa, Ankit S., Han, Myung -Geun, Chen, Hanghui, Zhu, Yimei, Ismail-Beigi, Sohrab, Walker, Frederick J., and Ahn, Charles H.. 2014. "Conduction at a ferroelectric interface". United States. doi:10.1103/PhysRevApplied.2.051001. https://www.osti.gov/servlets/purl/1182478.
@article{osti_1182478,
title = {Conduction at a ferroelectric interface},
author = {Marshall, Matthew S. J. and Malashevich, Andrei and Disa, Ankit S. and Han, Myung -Geun and Chen, Hanghui and Zhu, Yimei and Ismail-Beigi, Sohrab and Walker, Frederick J. and Ahn, Charles H.},
abstractNote = {Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.},
doi = {10.1103/PhysRevApplied.2.051001},
journal = {Physical Review Applied},
number = 5,
volume = 2,
place = {United States},
year = {2014},
month = {11}
}