Conduction at a ferroelectric interface
Abstract
Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.
- Authors:
-
- Yale Univ., New Haven, CT (United States)
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Publication Date:
- Research Org.:
- Brookhaven National Laboratory (BNL), Upton, NY (United States)
- Sponsoring Org.:
- USDOE Office of Science (SC), Basic Energy Sciences (BES)
- OSTI Identifier:
- 1182478
- Alternate Identifier(s):
- OSTI ID: 1181416
- Report Number(s):
- BNL-107264-2014-JA
Journal ID: ISSN 2331-7019; PRAHB2; R&D Project: MA015MACA; KC0201010
- Grant/Contract Number:
- SC00112704; AC02-98CH10886
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review Applied
- Additional Journal Information:
- Journal Volume: 2; Journal Issue: 5; Journal ID: ISSN 2331-7019
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Marshall, Matthew S. J., Malashevich, Andrei, Disa, Ankit S., Han, Myung -Geun, Chen, Hanghui, Zhu, Yimei, Ismail-Beigi, Sohrab, Walker, Frederick J., and Ahn, Charles H. Conduction at a ferroelectric interface. United States: N. p., 2014.
Web. doi:10.1103/PhysRevApplied.2.051001.
Marshall, Matthew S. J., Malashevich, Andrei, Disa, Ankit S., Han, Myung -Geun, Chen, Hanghui, Zhu, Yimei, Ismail-Beigi, Sohrab, Walker, Frederick J., & Ahn, Charles H. Conduction at a ferroelectric interface. United States. https://doi.org/10.1103/PhysRevApplied.2.051001
Marshall, Matthew S. J., Malashevich, Andrei, Disa, Ankit S., Han, Myung -Geun, Chen, Hanghui, Zhu, Yimei, Ismail-Beigi, Sohrab, Walker, Frederick J., and Ahn, Charles H. Wed .
"Conduction at a ferroelectric interface". United States. https://doi.org/10.1103/PhysRevApplied.2.051001. https://www.osti.gov/servlets/purl/1182478.
@article{osti_1182478,
title = {Conduction at a ferroelectric interface},
author = {Marshall, Matthew S. J. and Malashevich, Andrei and Disa, Ankit S. and Han, Myung -Geun and Chen, Hanghui and Zhu, Yimei and Ismail-Beigi, Sohrab and Walker, Frederick J. and Ahn, Charles H.},
abstractNote = {Typical logic elements utilizing the field effect rely on the change in carrier concentration due to the field in the channel region of the device. Ferroelectric-field-effect devices provide a nonvolatile version of this effect due to the stable polarization order parameter in the ferroelectric. In this study, we describe an oxide/oxide ferroelectric heterostructure device based on (001)-oriented PbZr₀̣.₂Ti₀.₈O₃-LaNiO₃ where the dominant change in conductivity is a result of a significant mobility change in the interfacial channel region. The effect is confined to a few atomic layers at the interface and is reversible by switching the ferroelectric polarization. More interestingly, in one polarization state, the field effect induces a 1.7 eV shift of the interfacial bands to create a new conducting channel in the interfacial PbO layer of the ferroelectric.},
doi = {10.1103/PhysRevApplied.2.051001},
journal = {Physical Review Applied},
number = 5,
volume = 2,
place = {United States},
year = {Wed Nov 05 00:00:00 EST 2014},
month = {Wed Nov 05 00:00:00 EST 2014}
}
Web of Science
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