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Title: Ab initio studies of Cs on GaAs (100) and (110) surfaces

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1181339
Grant/Contract Number:  
SC0003965
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 91; Journal Issue: 3; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Karkare, Siddharth, Boulet, Laurent, Singh, Arunima, Hennig, Richard, and Bazarov, Ivan. Ab initio studies of Cs on GaAs (100) and (110) surfaces. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.035408.
Karkare, Siddharth, Boulet, Laurent, Singh, Arunima, Hennig, Richard, & Bazarov, Ivan. Ab initio studies of Cs on GaAs (100) and (110) surfaces. United States. doi:10.1103/PhysRevB.91.035408.
Karkare, Siddharth, Boulet, Laurent, Singh, Arunima, Hennig, Richard, and Bazarov, Ivan. Mon . "Ab initio studies of Cs on GaAs (100) and (110) surfaces". United States. doi:10.1103/PhysRevB.91.035408.
@article{osti_1181339,
title = {Ab initio studies of Cs on GaAs (100) and (110) surfaces},
author = {Karkare, Siddharth and Boulet, Laurent and Singh, Arunima and Hennig, Richard and Bazarov, Ivan},
abstractNote = {},
doi = {10.1103/PhysRevB.91.035408},
journal = {Physical Review B},
number = 3,
volume = 91,
place = {United States},
year = {2015},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.91.035408

Citation Metrics:
Cited by: 3 works
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