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Title: Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO 3 Substrate

Authors:
; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1181323
Grant/Contract Number:  
AC02-05CH11231
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 114 Journal Issue: 3; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Cui, Y. -T., Moore, R. G., Zhang, A. -M., Tian, Y., Lee, J. J., Schmitt, F. T., Zhang, W. -H., Li, W., Yi, M., Liu, Z. -K., Hashimoto, M., Zhang, Y., Lu, D. -H., Devereaux, T. P., Wang, L. -L., Ma, X. -C., Zhang, Q. -M., Xue, Q. -K., Lee, D. -H., and Shen, Z. -X. Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO 3 Substrate. United States: N. p., 2015. Web. doi:10.1103/PhysRevLett.114.037002.
Cui, Y. -T., Moore, R. G., Zhang, A. -M., Tian, Y., Lee, J. J., Schmitt, F. T., Zhang, W. -H., Li, W., Yi, M., Liu, Z. -K., Hashimoto, M., Zhang, Y., Lu, D. -H., Devereaux, T. P., Wang, L. -L., Ma, X. -C., Zhang, Q. -M., Xue, Q. -K., Lee, D. -H., & Shen, Z. -X. Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO 3 Substrate. United States. doi:10.1103/PhysRevLett.114.037002.
Cui, Y. -T., Moore, R. G., Zhang, A. -M., Tian, Y., Lee, J. J., Schmitt, F. T., Zhang, W. -H., Li, W., Yi, M., Liu, Z. -K., Hashimoto, M., Zhang, Y., Lu, D. -H., Devereaux, T. P., Wang, L. -L., Ma, X. -C., Zhang, Q. -M., Xue, Q. -K., Lee, D. -H., and Shen, Z. -X. Thu . "Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO 3 Substrate". United States. doi:10.1103/PhysRevLett.114.037002.
@article{osti_1181323,
title = {Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO 3 Substrate},
author = {Cui, Y. -T. and Moore, R. G. and Zhang, A. -M. and Tian, Y. and Lee, J. J. and Schmitt, F. T. and Zhang, W. -H. and Li, W. and Yi, M. and Liu, Z. -K. and Hashimoto, M. and Zhang, Y. and Lu, D. -H. and Devereaux, T. P. and Wang, L. -L. and Ma, X. -C. and Zhang, Q. -M. and Xue, Q. -K. and Lee, D. -H. and Shen, Z. -X.},
abstractNote = {},
doi = {10.1103/PhysRevLett.114.037002},
journal = {Physical Review Letters},
number = 3,
volume = 114,
place = {United States},
year = {2015},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.114.037002

Citation Metrics:
Cited by: 15 works
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