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Title: Strain sensitivity of band gaps of Sn-containing semiconductors

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
OSTI Identifier:
1181222
Grant/Contract Number:  
SC0001060
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 91; Journal Issue: 4; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Li, Hong, Castelli, Ivano E., Thygesen, Kristian S., and Jacobsen, Karsten W. Strain sensitivity of band gaps of Sn-containing semiconductors. United States: N. p., 2015. Web. doi:10.1103/PhysRevB.91.045204.
Li, Hong, Castelli, Ivano E., Thygesen, Kristian S., & Jacobsen, Karsten W. Strain sensitivity of band gaps of Sn-containing semiconductors. United States. doi:10.1103/PhysRevB.91.045204.
Li, Hong, Castelli, Ivano E., Thygesen, Kristian S., and Jacobsen, Karsten W. Thu . "Strain sensitivity of band gaps of Sn-containing semiconductors". United States. doi:10.1103/PhysRevB.91.045204.
@article{osti_1181222,
title = {Strain sensitivity of band gaps of Sn-containing semiconductors},
author = {Li, Hong and Castelli, Ivano E. and Thygesen, Kristian S. and Jacobsen, Karsten W.},
abstractNote = {},
doi = {10.1103/PhysRevB.91.045204},
journal = {Physical Review B},
number = 4,
volume = 91,
place = {United States},
year = {2015},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.91.045204

Citation Metrics:
Cited by: 8 works
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