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Title: Theory of oxygen-boron vacancy defect in cubic boron nitride: A diamond NV isoelectronic center

Authors:
 [1];  [1];  [2];  [3];  [3];  [4]
  1. State Univ. of New York (SUNY), Buffalo, NY (United States)
  2. Beijing Computational Science Research Center (China)
  3. Rensselaer Polytechnic Inst., Troy, NY (United States)
  4. State Univ. of New York (SUNY), Buffalo, NY (United States); Beijing Computational Science Research Center (China)
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1180840
Grant/Contract Number:  
SC0002623
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 113 Journal Issue: 13; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Abtew, Tesfaye A., Gao, Weiwei, Gao, Xiang, Sun, Y.  Y., Zhang, S.  B., and Zhang, Peihong. Theory of oxygen-boron vacancy defect in cubic boron nitride: A diamond NV– isoelectronic center. United States: N. p., 2014. Web. doi:10.1103/PhysRevLett.113.136401.
Abtew, Tesfaye A., Gao, Weiwei, Gao, Xiang, Sun, Y.  Y., Zhang, S.  B., & Zhang, Peihong. Theory of oxygen-boron vacancy defect in cubic boron nitride: A diamond NV– isoelectronic center. United States. doi:10.1103/PhysRevLett.113.136401.
Abtew, Tesfaye A., Gao, Weiwei, Gao, Xiang, Sun, Y.  Y., Zhang, S.  B., and Zhang, Peihong. Tue . "Theory of oxygen-boron vacancy defect in cubic boron nitride: A diamond NV– isoelectronic center". United States. doi:10.1103/PhysRevLett.113.136401.
@article{osti_1180840,
title = {Theory of oxygen-boron vacancy defect in cubic boron nitride: A diamond NV– isoelectronic center},
author = {Abtew, Tesfaye A. and Gao, Weiwei and Gao, Xiang and Sun, Y.  Y. and Zhang, S.  B. and Zhang, Peihong},
abstractNote = {},
doi = {10.1103/PhysRevLett.113.136401},
journal = {Physical Review Letters},
number = 13,
volume = 113,
place = {United States},
year = {2014},
month = {9}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.113.136401

Citation Metrics:
Cited by: 7 works
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Works referenced in this record:

Cathodoluminescence of Cubic Boron Nitride - Mössbauer-Type Spectra
journal, January 1985

  • Tkachev, V. D.; Shepilo, V. B.; Zaitsev, A. M.
  • physica status solidi (b), Vol. 127, Issue 1
  • DOI: 10.1002/pssb.2221270160

Generalized Gradient Approximation Made Simple
journal, October 1996

  • Perdew, John P.; Burke, Kieron; Ernzerhof, Matthias
  • Physical Review Letters, Vol. 77, Issue 18, p. 3865-3868
  • DOI: 10.1103/PhysRevLett.77.3865

Influence of high pressure on cathodoluminescence of cubic boron nitride
journal, July 1988

  • Shipilo, V. B.; Shishonok, E. M.; Olekhnovich, A. I.
  • Physica Status Solidi (a), Vol. 108, Issue 1
  • DOI: 10.1002/pssa.2211080145

Mechanism for optical initialization of spin in NV center in diamond
journal, July 2012


Hybrid functionals based on a screened Coulomb potential
journal, May 2003

  • Heyd, Jochen; Scuseria, Gustavo E.; Ernzerhof, Matthias
  • The Journal of Chemical Physics, Vol. 118, Issue 18
  • DOI: 10.1063/1.1564060

Ab initio models of amorphous Si 1 x Ge x : H
journal, January 2007


QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
journal, September 2009

  • Giannozzi, Paolo; Baroni, Stefano; Bonini, Nicola
  • Journal of Physics: Condensed Matter, Vol. 21, Issue 39, Article No. 395502
  • DOI: 10.1088/0953-8984/21/39/395502

Theory of Spin-Conserving Excitation of the N V Center in Diamond
journal, October 2009


Excited states of the negatively charged nitrogen-vacancy color center in diamond
journal, January 2010


Preparation of Semiconducting Cubic Boron Nitride
journal, April 1962

  • Wentorf, R. H.
  • The Journal of Chemical Physics, Vol. 36, Issue 8
  • DOI: 10.1063/1.1732816

How to exploit ion-induced stress relaxation to grow thick c-BN films
journal, January 2002

  • Ziemann, P.; Boyen, H. -G.; Deyneka, N.
  • Pure and Applied Chemistry, Vol. 74, Issue 3
  • DOI: 10.1351/pac200274030489

Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy
journal, January 2008


Cathodoluminescence of annealed cubic boron nitride
journal, May 1986

  • Zaitsev, A. M.; Shipilo, V. B.; Shishonok, E. M.
  • physica status solidi (a), Vol. 95, Issue 1
  • DOI: 10.1002/pssa.2210950152

Effects of MeV ion irradiation of thin cubic boron nitride films
journal, March 1998

  • Ullmann, J.; Baglin, J. E. E.; Kellock, A. J.
  • Journal of Applied Physics, Vol. 83, Issue 6
  • DOI: 10.1063/1.367053

High-Rate Deposition of High-Quality, Thick Cubic Boron Nitride Films by Bias-Assisted DC Jet Plasma Chemical Vapor Deposition
journal, May 2000

  • Matsumoto, Seiichiro; Zhang, Wenjun
  • Japanese Journal of Applied Physics, Vol. 39, Issue Part 2, No. 5B
  • DOI: 10.1143/JJAP.39.L442

Review of advances in cubic boron nitride film synthesis
journal, December 1997

  • Mirkarimi, P. B.; McCarty, K. F.; Medlin, D. L.
  • Materials Science and Engineering: R: Reports, Vol. 21, Issue 2
  • DOI: 10.1016/S0927-796X(97)00009-0

Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors
journal, April 2008


Effect of annealing on cathodoluminescence of cubic boron nitride
journal, October 1986

  • Shipilo, B. V.; Zaitsev, A. M.; Shishonok, E. M.
  • Journal of Applied Spectroscopy, Vol. 45, Issue 4
  • DOI: 10.1007/BF00663590

ESR characterization of point defects in amber colored c-BN super abrasive powders
journal, September 2004

  • Nistor, S. V.; Ghica, D.; Stefan, M.
  • physica status solidi (a), Vol. 201, Issue 11
  • DOI: 10.1002/pssa.200405194

Photoluminescence spectroscopy of electron-irradiation induced defects in cubic boron nitride (cBN)
journal, August 2004


Optical properties of the nitrogen-vacancy singlet levels in diamond
journal, November 2010


Sequential ion-induced stress relaxation and growth: A way to prepare stress-relieved thick films of cubic boron nitride
journal, February 2000

  • Boyen, H. -G.; Widmayer, P.; Schwertberger, D.
  • Applied Physics Letters, Vol. 76, Issue 6
  • DOI: 10.1063/1.125869

The nature of some luminescence centers in cubic boron nitride
journal, October 1989

  • Shishonok, E. M.; Shipilo, V. B.; Lukomskii, A. I.
  • Physica Status Solidi (a), Vol. 115, Issue 2
  • DOI: 10.1002/pssa.2211150257

Electron–phonon coupling is large for localized states
journal, June 2004


Electronic structure of the nitrogen-vacancy center in diamond from first-principles theory
journal, April 2008


Optical Studies of the 1.945 eV Vibronic Band in Diamond
journal, February 1976

  • Davies, G.; Hamer, M. F.
  • Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 348, Issue 1653
  • DOI: 10.1098/rspa.1976.0039

EPR observation of first point defects in cubic boron nitride crystalline powders
journal, May 2000


Cubic boron nitride thin film growth by boron and nitrogen ion implantation
journal, August 2005


A single-molecule approach to ZnO defect studies: Single photons and single defects
journal, July 2014

  • Jungwirth, N. R.; Pai, Y. Y.; Chang, H. S.
  • Journal of Applied Physics, Vol. 116, Issue 4
  • DOI: 10.1063/1.4890979

Thick and adherent cubic boron nitride films grown on diamond interlayers by fluorine-assisted chemical vapor deposition
journal, August 2004

  • Zhang, W. J.; Bello, I.; Lifshitz, Y.
  • Applied Physics Letters, Vol. 85, Issue 8
  • DOI: 10.1063/1.1784545