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Title: Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells

Authors:
; ; ; ; ;
Publication Date:
Grant/Contract Number:
AC02-76SF00515
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 113; Journal Issue: 14; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Sponsoring Org:
USDOE
Country of Publication:
United States
Language:
English
OSTI Identifier:
1180254

Wang, Qing-Ze, Liu, Xin, Zhang, Hai-Jun, Samarth, Nitin, Zhang, Shou-Cheng, and Liu, Chao-Xing. Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells. United States: N. p., Web. doi:10.1103/PhysRevLett.113.147201.
Wang, Qing-Ze, Liu, Xin, Zhang, Hai-Jun, Samarth, Nitin, Zhang, Shou-Cheng, & Liu, Chao-Xing. Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells. United States. doi:10.1103/PhysRevLett.113.147201.
Wang, Qing-Ze, Liu, Xin, Zhang, Hai-Jun, Samarth, Nitin, Zhang, Shou-Cheng, and Liu, Chao-Xing. 2014. "Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells". United States. doi:10.1103/PhysRevLett.113.147201.
@article{osti_1180254,
title = {Quantum Anomalous Hall Effect in Magnetically Doped InAs/GaSb Quantum Wells},
author = {Wang, Qing-Ze and Liu, Xin and Zhang, Hai-Jun and Samarth, Nitin and Zhang, Shou-Cheng and Liu, Chao-Xing},
abstractNote = {},
doi = {10.1103/PhysRevLett.113.147201},
journal = {Physical Review Letters},
number = 14,
volume = 113,
place = {United States},
year = {2014},
month = {9}
}