skip to main content

DOE PAGESDOE PAGES

Title: Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy

Authors:
; ; ; ; ;
Publication Date:
Grant/Contract Number:
FG02-00ER45799
Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 90; Journal Issue: 23; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
OSTI Identifier:
1180064

Khatib, O., Mueller, A. S., Stinson, H. T., Yuen, J. D., Heeger, A. J., and Basov, D. N.. Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy. United States: N. p., Web. doi:10.1103/PhysRevB.90.235307.
Khatib, O., Mueller, A. S., Stinson, H. T., Yuen, J. D., Heeger, A. J., & Basov, D. N.. Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy. United States. doi:10.1103/PhysRevB.90.235307.
Khatib, O., Mueller, A. S., Stinson, H. T., Yuen, J. D., Heeger, A. J., and Basov, D. N.. 2014. "Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy". United States. doi:10.1103/PhysRevB.90.235307.
@article{osti_1180064,
title = {Electron and hole polaron accumulation in low-bandgap ambipolar donor-acceptor polymer transistors imaged by infrared microscopy},
author = {Khatib, O. and Mueller, A. S. and Stinson, H. T. and Yuen, J. D. and Heeger, A. J. and Basov, D. N.},
abstractNote = {},
doi = {10.1103/PhysRevB.90.235307},
journal = {Physical Review B},
number = 23,
volume = 90,
place = {United States},
year = {2014},
month = {12}
}