Thermal transport across high-pressure semiconductor-metal transition in Si and
Abstract
Time-domain thermoreflectance (TDTR) can be applied to metallic samples at high pressures in the diamond anvil cell (DAC) and provide non-contact measurements of thermal transport properties. We have performed regular and beam-offset TDTR to establish the thermal conductivities of Si and Si0.991Ge0.009 across the semiconductor-metal phase transition and up to 45 GPa. The thermal conductivities of metallic Si and Si(Ge) are comparable to aluminum and indicative of predominantly electronic heat carriers. Metallic Si and Si(Ge) have an anisotropy of approximately 1.4, similar to that of beryllium, due to the primitive hexagonal crystal structure. Furthermore, we used the Wiedemann-Franz law to derive the associated electrical resistivity, and found it consistent with the Bloch-Gruneisen model.
- Authors:
-
- Univ. of Illinois at Urbana-Champaign, Urbana, IL (United States)
- Publication Date:
- Research Org.:
- Carnegie Institution of Washington, Washington, D.C. (United States)
- Sponsoring Org.:
- USDOE National Nuclear Security Administration (NNSA)
- OSTI Identifier:
- 1335877
- Alternate Identifier(s):
- OSTI ID: 1179723
- Grant/Contract Number:
- NA0002006; EE0005976
- Resource Type:
- Accepted Manuscript
- Journal Name:
- Physical Review. B, Condensed Matter and Materials Physics
- Additional Journal Information:
- Journal Volume: 91; Journal Issue: 20; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society (APS)
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
Citation Formats
Hohensee, Gregory T., Fellinger, Michael R., Trinkle, Dallas R., and Cahill, David G. Thermal transport across high-pressure semiconductor-metal transition in Si and Si0.991Ge0.009. United States: N. p., 2015.
Web. doi:10.1103/PhysRevB.91.205104.
Hohensee, Gregory T., Fellinger, Michael R., Trinkle, Dallas R., & Cahill, David G. Thermal transport across high-pressure semiconductor-metal transition in Si and Si0.991Ge0.009. United States. https://doi.org/10.1103/PhysRevB.91.205104
Hohensee, Gregory T., Fellinger, Michael R., Trinkle, Dallas R., and Cahill, David G. Thu .
"Thermal transport across high-pressure semiconductor-metal transition in Si and Si0.991Ge0.009". United States. https://doi.org/10.1103/PhysRevB.91.205104. https://www.osti.gov/servlets/purl/1335877.
@article{osti_1335877,
title = {Thermal transport across high-pressure semiconductor-metal transition in Si and Si0.991Ge0.009},
author = {Hohensee, Gregory T. and Fellinger, Michael R. and Trinkle, Dallas R. and Cahill, David G.},
abstractNote = {Time-domain thermoreflectance (TDTR) can be applied to metallic samples at high pressures in the diamond anvil cell (DAC) and provide non-contact measurements of thermal transport properties. We have performed regular and beam-offset TDTR to establish the thermal conductivities of Si and Si0.991Ge0.009 across the semiconductor-metal phase transition and up to 45 GPa. The thermal conductivities of metallic Si and Si(Ge) are comparable to aluminum and indicative of predominantly electronic heat carriers. Metallic Si and Si(Ge) have an anisotropy of approximately 1.4, similar to that of beryllium, due to the primitive hexagonal crystal structure. Furthermore, we used the Wiedemann-Franz law to derive the associated electrical resistivity, and found it consistent with the Bloch-Gruneisen model.},
doi = {10.1103/PhysRevB.91.205104},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 20,
volume = 91,
place = {United States},
year = {Thu May 07 00:00:00 EDT 2015},
month = {Thu May 07 00:00:00 EDT 2015}
}
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