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Title: Bi-induced band gap reduction in epitaxial InSbBi alloys

The properties of molecular beam epitaxy-grown InSb1-x Bix alloys are investigated. Rutherford backscattering spectrometry shows that the Bi content increases from 0.6% for growth at 350 °C to 2.4% at 200 °C. X-ray diffraction indicates Bi-induced lattice dilation and suggests a zinc-blende InBi lattice parameter of 6.626 Å. Scanning electron microscopy reveals surface InSbBi nanostructures on the InSbBi films for the lowest growth temperatures, Bi droplets at intermediate temperatures, and smooth surfaces for the highest temperature. The room temperature optical absorption edge was found to change from 172 meV (7.2 μm) for InSb to ~88 meV (14.1 μm) for InSb0.976Bi0.024, a reduction of ~35 meV/%Bi.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [1] ;  [3] ;  [4] ;  [4] ;  [3] ;  [3] ;  [1]
  1. Univ. of Liverpool, Liverpool (United Kingdom)
  2. Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
  3. Univ. of Warwick, Coventry (United Kingdom)
  4. Binghamton Univ., Binghamton, NY (United States)
Publication Date:
Grant/Contract Number:
AC02-05CH11231; AC02-98CH10886
Type:
Published Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 105; Journal Issue: 21; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)
Research Org:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; thin film growth; III-V semiconductors; lattice constants; Rutherford backscattering; fluid drops
OSTI Identifier:
1179636
Alternate Identifier(s):
OSTI ID: 1212662