Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films

Choi, Woo Seok; Lee, Ho Nyung

doi:10.1103/PhysRevB.91.174101

Title: Strain tuning of electronic structure in Bi₄Ti₃O₁₂-LaCoO₃ epitaxial thin films

Abstract

In this study, we investigated the crystal and electronic structures of ferroelectric Bi₄Ti₃O₁₂ single-crystalline thin films site-specifically substituted with LaCoO₃ (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO₃ and SrTiO₃ substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3d states, based on a spectroscopic ellipsometry study. In particular, the Co 3d state seems to largely overlap with the Ti t_2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.

Authors:

Choi, Woo Seok ^[1]; Lee, Ho Nyung ^[2]

Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Sungkyunkwan Univ., Suwon (Korea)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Publication Date:: Fri May 08 00:00:00 EDT 2015

Research Org.:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Org.:: USDOE Office of Science (SC)

OSTI Identifier:: 1193186

Alternate Identifier(s):: OSTI ID: 1179192

Grant/Contract Number:: AC05-00OR22725

Resource Type:: Accepted Manuscript

Journal Name:: Physical Review. B, Condensed Matter and Materials Physics

Additional Journal Information:: Journal Volume: 91; Journal Issue: 17; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society (APS)

Country of Publication:: United States

Language:: English

Subject:: 36 MATERIALS SCIENCE

Citation Formats


                    Choi, Woo Seok, and Lee, Ho Nyung. Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films.  United States: N. p., 2015. 
Web.  doi:10.1103/PhysRevB.91.174101.

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                    Choi, Woo Seok, & Lee, Ho Nyung. Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films.  United States.  https://doi.org/10.1103/PhysRevB.91.174101

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                    Choi, Woo Seok, and Lee, Ho Nyung. Fri .  
"Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films".  United States.  https://doi.org/10.1103/PhysRevB.91.174101.  https://www.osti.gov/servlets/purl/1193186.

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@article{osti_1193186,

  title        = {Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films},

  author       = {Choi, Woo Seok and Lee, Ho Nyung},

  abstractNote = {In this study, we investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 single-crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3d states, based on a spectroscopic ellipsometry study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.},

  doi          = {10.1103/PhysRevB.91.174101},

  journal      = {Physical Review. B, Condensed Matter and Materials Physics},

  number       = 17,

  volume       = 91,

  place        = {United States},

  year         = {Fri May 08 00:00:00 EDT 2015},

  month        = {Fri May 08 00:00:00 EDT 2015}

}

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Works referencing / citing this record:

Band gap narrowing and magnetic properties of transition‐metal‐doped Ba _0.85 Ca _0.15 Ti _0.9 Zr _0.1 O ₃ lead‐free ceramics
journal, December 2019

Zhang, Yuemin; Deng, Hongmei; Si, Shufang
Journal of the American Ceramic Society, Vol. 103, Issue 4
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Title: Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films

Abstract

Citation Formats

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Title: Strain tuning of electronic structure in Bi₄Ti₃O₁₂-LaCoO₃ epitaxial thin films

Optical band gap of BiFeO3 grown by molecular-beam epitaxy
journal, April 2008

Optimal Doping Level of Bismuth Titanate to Modulate Optical Bandgap for Oxide Optoelectronics
journal, September 2013

Elastic strain engineering of ferroic oxides
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Bandgap tuning of multiferroic oxide solar cells
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Structural and optical properties of bandgap engineered bismuth titanate by cobalt doping
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Wide bandgap tunability in complex transition metal oxides by site-specific substitution
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