Search Menu
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information
Search Scholarly Publications

Title: X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO 2 /Pt Cells

Abstract

The interaction between X-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant X-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. But, it has not been widely investigated how functional materials respond to the brilliant X-rays. Here, we report the X-ray-induced reversible resistance change in 40-nm-thick TiO2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging X-rays. Furthermore, we found that this effect, combined with the X-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a nonvolatile reversible resistance change. In understanding X-ray-controlled reversible resistance changes we can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices.

Authors:
; ; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Org.:
USDOE Office of Science (SC), Basic Energy Sciences (BES)
OSTI Identifier:
1167143
Alternate Identifier(s):
OSTI ID: 1357574
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Published Article
Journal Name:
ACS Nano
Additional Journal Information:
Journal Name: ACS Nano Journal Volume: 8 Journal Issue: 2; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Joule heating; Magnéli phase; X-ray irradiation; defect generation; photovoltaic effect; resistive switching

Citation Formats

Chang, Seo Hyoung, Kim, Jungho, Phatak, Charudatta, D’Aquila, Kenneth, Kim, Seong Keun, Kim, Jiyoon, Song, Seul Ji, Hwang, Cheol Seong, Eastman, Jeffrey A., Freeland, John W., and Hong, Seungbum. X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO 2 /Pt Cells. United States: N. p., 2014. Web. doi:10.1021/nn405867p.
Copy to clipboard
Chang, Seo Hyoung, Kim, Jungho, Phatak, Charudatta, D’Aquila, Kenneth, Kim, Seong Keun, Kim, Jiyoon, Song, Seul Ji, Hwang, Cheol Seong, Eastman, Jeffrey A., Freeland, John W., & Hong, Seungbum. X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO 2 /Pt Cells. United States. https://doi.org/10.1021/nn405867p
Copy to clipboard
Chang, Seo Hyoung, Kim, Jungho, Phatak, Charudatta, D’Aquila, Kenneth, Kim, Seong Keun, Kim, Jiyoon, Song, Seul Ji, Hwang, Cheol Seong, Eastman, Jeffrey A., Freeland, John W., and Hong, Seungbum. Tue . "X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO 2 /Pt Cells". United States. https://doi.org/10.1021/nn405867p.
Copy to clipboard
@article{osti_1167143,
title = {X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO 2 /Pt Cells},
author = {Chang, Seo Hyoung and Kim, Jungho and Phatak, Charudatta and D’Aquila, Kenneth and Kim, Seong Keun and Kim, Jiyoon and Song, Seul Ji and Hwang, Cheol Seong and Eastman, Jeffrey A. and Freeland, John W. and Hong, Seungbum},
abstractNote = {The interaction between X-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant X-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. But, it has not been widely investigated how functional materials respond to the brilliant X-rays. Here, we report the X-ray-induced reversible resistance change in 40-nm-thick TiO2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging X-rays. Furthermore, we found that this effect, combined with the X-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a nonvolatile reversible resistance change. In understanding X-ray-controlled reversible resistance changes we can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices.},
doi = {10.1021/nn405867p},
journal = {ACS Nano},
number = 2,
volume = 8,
place = {United States},
year = {Tue Feb 25 00:00:00 EST 2014},
month = {Tue Feb 25 00:00:00 EST 2014}
}
Copy to clipboard
Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1021/nn405867p
Copyright Statement
Other availability
Search WorldCat Search WorldCat to find libraries that may hold this journal
Citation Metrics:
Cited by: 30 works
Citation information provided by
Web of Science
Save / Share:
Export Metadata
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.

Works referenced in this record:

The missing memristor found
journal, May 2008

  • Strukov, Dmitri B.; Snider, Gregory S.; Stewart, Duncan R.
  • Nature, Vol. 453, Issue 7191
  • DOI: 10.1038/nature06932

Ferroelectricity in Ultrathin Perovskite Films
journal, June 2004

  • Fong, Dillon D.; Stephenson, G. Brian; Streiffer, Stephen K.
  • Science, Vol. 304, Issue 5677, p. 1650-1653
  • DOI: 10.1126/science.1098252

An X-ray-induced insulator–metal transition in a magnetoresistive manganite
journal, April 1997

  • Kiryukhin, V.; Casa, D.; Hill, J. P.
  • Nature, Vol. 386, Issue 6627
  • DOI: 10.1038/386813a0

Occurrence of Both Unipolar Memory and Threshold Resistance Switching in a NiO Film
journal, January 2009

Nanoionics-based resistive switching memories
journal, November 2007

  • Waser, Rainer; Aono, Masakazu
  • Nature Materials, Vol. 6, Issue 11, p. 833-840
  • DOI: 10.1038/nmat2023

Stability of ionically bonded surfaces in ionizing environments
journal, December 1979

Coherent orbital waves in the photo-induced insulator–metal dynamics of a magnetoresistive manganite
journal, August 2007

  • Polli, D.; Rini, M.; Wall, S.
  • Nature Materials, Vol. 6, Issue 9
  • DOI: 10.1038/nmat1979

TiO 2 —a prototypical memristive material
journal, May 2011

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
journal, May 2011

Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
journal, July 2007

  • Kim, Kyung Min; Choi, Byung Joon; Shin, Yong Cheol
  • Applied Physics Letters, Vol. 91, Issue 1
  • DOI: 10.1063/1.2749846

Quantized conductance atomic switch
journal, January 2005

Evolution and control of oxygen order in a cuprate superconductor
journal, August 2011

  • Poccia, Nicola; Fratini, Michela; Ricci, Alessandro
  • Nature Materials, Vol. 10, Issue 10
  • DOI: 10.1038/nmat3088

Random Circuit Breaker Network Model for Unipolar Resistance Switching
journal, March 2008

  • Chae, Seung Chul; Lee, Jae Sung; Kim, Sejin
  • Advanced Materials, Vol. 20, Issue 6
  • DOI: 10.1002/adma.200702024

Morphological and electrical changes in TiO 2 memristive devices induced by electroforming and switching: Morphological and electrical changes in TiO 2 memristive devices
journal, November 2009

  • Münstermann, Ruth; Yang, J. Joshua; Strachan, John Paul
  • physica status solidi (RRL) - Rapid Research Letters, Vol. 4, Issue 1-2
  • DOI: 10.1002/pssr.200903347

Effect of Irradiation-Induced Disorder on the Conductivity and Critical Temperature of the Organic Superconductor κ − ( BEDT − TTF ) 2 Cu ( SCN ) 2
journal, May 2006

The mechanism of electroforming of metal oxide memristive switches
journal, May 2009

Ambient effects on electric-field-induced local charge modification of TiO 2
journal, January 2012

  • Kim, Haeri; Hong, Seungbum; Kim, Dong-Wook
  • Applied Physics Letters, Vol. 100, Issue 2
  • DOI: 10.1063/1.3675630

Electrical phenomena in amorphous oxide films
journal, September 1970

Oxide Double-Layer Nanocrossbar for Ultrahigh-Density Bipolar Resistive Memory
journal, August 2011

  • Chang, Seo Hyoung; Lee, Shin Buhm; Jeon, Dae Young
  • Advanced Materials, Vol. 23, Issue 35, p. 4063-4067
  • DOI: 10.1002/adma.201102395

Role of Oxygen Vacancies in Cr-Doped SrTiO3 for Resistance-Change Memory
journal, September 2007

Angular distributions of ions desorbing from TiO2
journal, March 1986

  • Kurtz, Richard L.; Stockbauer, R.; Madey, T. E.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 13, Issue 1-3
  • DOI: 10.1016/0168-583X(86)90558-6

Imprinting Magnetic Information in Manganites with X Rays
journal, October 2012

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
journal, January 2010

  • Kwon, Deok-Hwang; Kim, Kyung Min; Jang, Jae Hyuck
  • Nature Nanotechnology, Vol. 5, Issue 2
  • DOI: 10.1038/nnano.2009.456

Direct electrochemical reduction of titanium dioxide to titanium in molten calcium chloride
journal, September 2000

  • Fray, Derek J.; Chen, George Zheng; Farthing, Tom W.
  • Nature, Vol. 407, Issue 6802, p. 361-364
  • DOI: 10.1038/35030069

Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
journal, June 2011

  • Ohno, Takeo; Hasegawa, Tsuyoshi; Tsuruoka, Tohru
  • Nature Materials, Vol. 10, Issue 8
  • DOI: 10.1038/nmat3054

Memristive devices for computing
journal, January 2013

  • Yang, J. Joshua; Strukov, Dmitri B.; Stewart, Duncan R.
  • Nature Nanotechnology, Vol. 8, Issue 1, p. 13-24
  • DOI: 10.1038/nnano.2012.240

Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
journal, August 2005

  • Choi, B. J.; Jeong, D. S.; Kim, S. K.
  • Journal of Applied Physics, Vol. 98, Issue 3
  • DOI: 10.1063/1.2001146

Memristive switching mechanism for metal/oxide/metal nanodevices
journal, June 2008

  • Yang, J. Joshua; Pickett, Matthew D.; Li, Xuema
  • Nature Nanotechnology, Vol. 3, Issue 7
  • DOI: 10.1038/nnano.2008.160
    Sort by:
    [ × clear filter / sort ]

    Similar Records in DOE PAGES and OSTI.GOV collections: