skip to main content

DOE PAGESDOE PAGES

Title: X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO 2 /Pt Cells

The interaction between X-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant X-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. But, it has not been widely investigated how functional materials respond to the brilliant X-rays. Here, we report the X-ray-induced reversible resistance change in 40-nm-thick TiO 2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging X-rays. Furthermore, we found that this effect, combined with the X-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a nonvolatile reversible resistance change. In understanding X-ray-controlled reversible resistance changes we can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [5] ;  [6] ;  [7] ;  [7] ;  [1] ;  [2] ;  [8]
  1. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division
  2. Argonne National Lab. (ANL), Argonne, IL (United States). Advanced Photon Source
  3. Argonne National Lab. (ANL), Argonne, IL (United States). Nanoscience and Technology Division
  4. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Argonne National Lab. (ANL), Argonne, IL (United States). Nanoscience and Technology Division; Northwestern Univ., Evanston, IL (United States). Dept. of Materials Science and Engineering
  5. Korea Inst. of Science and Technology, Seoul (Korea); Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering and Inter-university Semiconductor Research Center
  6. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division; Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of). Dept. of Materials Science and Engineering
  7. Seoul National Univ. (Korea, Republic of). Dept. of Materials Science and Engineering and Inter-university Semiconductor Research Center
  8. Argonne National Lab. (ANL), Argonne, IL (United States). Materials Science Division and Nanoscience and Technology Division; Korea Advanced Inst. Science and Technology (KAIST), Daejeon (Korea, Republic of). Dept. of Materials Science and Engineering
Publication Date:
Grant/Contract Number:
AC02-06CH11357
Type:
Published Article
Journal Name:
ACS Nano
Additional Journal Information:
Journal Volume: 8; Journal Issue: 2; Journal ID: ISSN 1936-0851
Publisher:
American Chemical Society (ACS)
Research Org:
Argonne National Lab. (ANL), Argonne, IL (United States)
Sponsoring Org:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; Joule heating; Magnéli phase; X-ray irradiation; defect generation; photovoltaic effect; resistive switching
OSTI Identifier:
1167143
Alternate Identifier(s):
OSTI ID: 1357574