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Title: Fermi-level pinning, charge transfer, and relaxation of spin-momentum locking at metal contacts to topological insulators

Abstract

Topological insulators are of interest for many applications in electronics and optoelectronics, but harnessing their unique properties requires detailed understanding and control of charge injection at electrical contacts. Here we present large-scale ab initio calculations of the electronic properties of Au, Ni, Pt, Pd, and graphene contacts to Bi2Se3. We show that regardless of the metal, the Fermi level is located in the conduction band, leading to n-type Ohmic contact to the first quintuplet. Furthermore, we find strong charge transfer and band-bending in the first few quintuplets, with no Schottky barrier for charge injection even when the topoplogical insulator is undoped. Our calculations indicate that Au and graphene leave the spin-momentum locking mostly unaltered, but on the other hand, Ni, Pd, and Pt strongly hybridize with Bi2Se3 and relax spin-momentum locking. In conclusion, our results indicate that judicious choice of the contact metal is essential to reveal the unique surface features of topological insulators.

Authors:
 [1];  [1]
  1. Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Publication Date:
Research Org.:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Org.:
USDOE National Nuclear Security Administration (NNSA)
OSTI Identifier:
1146010
Alternate Identifier(s):
OSTI ID: 1179988
Report Number(s):
SAND2014-4426J
Journal ID: ISSN 1098-0121; PRBMDO; 519438
Grant/Contract Number:  
AC04-94AL85000; N0001413IP20091; AC01-94-AL85000; DEAC01-94-AL85000
Resource Type:
Accepted Manuscript
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 90; Journal Issue: 8; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society (APS)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Bi₂Se₃; contacts; topological insulator; Fermi-level pinning; charge transfer

Citation Formats

Spataru, Catalin D., and Léonard, François. Fermi-level pinning, charge transfer, and relaxation of spin-momentum locking at metal contacts to topological insulators. United States: N. p., 2014. Web. doi:10.1103/PhysRevB.90.085115.
Spataru, Catalin D., & Léonard, François. Fermi-level pinning, charge transfer, and relaxation of spin-momentum locking at metal contacts to topological insulators. United States. https://doi.org/10.1103/PhysRevB.90.085115
Spataru, Catalin D., and Léonard, François. Wed . "Fermi-level pinning, charge transfer, and relaxation of spin-momentum locking at metal contacts to topological insulators". United States. https://doi.org/10.1103/PhysRevB.90.085115. https://www.osti.gov/servlets/purl/1146010.
@article{osti_1146010,
title = {Fermi-level pinning, charge transfer, and relaxation of spin-momentum locking at metal contacts to topological insulators},
author = {Spataru, Catalin D. and Léonard, François},
abstractNote = {Topological insulators are of interest for many applications in electronics and optoelectronics, but harnessing their unique properties requires detailed understanding and control of charge injection at electrical contacts. Here we present large-scale ab initio calculations of the electronic properties of Au, Ni, Pt, Pd, and graphene contacts to Bi2Se3. We show that regardless of the metal, the Fermi level is located in the conduction band, leading to n-type Ohmic contact to the first quintuplet. Furthermore, we find strong charge transfer and band-bending in the first few quintuplets, with no Schottky barrier for charge injection even when the topoplogical insulator is undoped. Our calculations indicate that Au and graphene leave the spin-momentum locking mostly unaltered, but on the other hand, Ni, Pd, and Pt strongly hybridize with Bi2Se3 and relax spin-momentum locking. In conclusion, our results indicate that judicious choice of the contact metal is essential to reveal the unique surface features of topological insulators.},
doi = {10.1103/PhysRevB.90.085115},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
number = 8,
volume = 90,
place = {United States},
year = {Wed Aug 13 00:00:00 EDT 2014},
month = {Wed Aug 13 00:00:00 EDT 2014}
}

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Cited by: 43 works
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Works referenced in this record:

Control over topological insulator photocurrents with light polarization
journal, December 2011

  • McIver, J. W.; Hsieh, D.; Steinberg, H.
  • Nature Nanotechnology, Vol. 7, Issue 2, p. 96-100
  • DOI: 10.1038/nnano.2011.214

The origin of the conductivity maximum in molten salts. I. Bismuth chloride
journal, March 2012

  • Clay, Adam T.; Kuntz, Colin M.; Johnson, Keith E.
  • The Journal of Chemical Physics, Vol. 136, Issue 12
  • DOI: 10.1063/1.3694830

Experimental Realization of a Three-Dimensional Topological Insulator, Bi2Te3
journal, June 2009


Topological insulators
journal, February 2011


Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
journal, December 2006

  • Bernevig, B. A.; Hughes, T. L.; Zhang, S.-C.
  • Science, Vol. 314, Issue 5806, p. 1757-1761
  • DOI: 10.1126/science.1133734

Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
journal, May 2009

  • Xia, Y.; Qian, D.; Hsieh, D.
  • Nature Physics, Vol. 5, Issue 6, p. 398-402
  • DOI: 10.1038/nphys1274

Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
journal, May 2009

  • Zhang, Haijun; Liu, Chao-Xing; Qi, Xiao-Liang
  • Nature Physics, Vol. 5, Issue 6, p. 438-442
  • DOI: 10.1038/nphys1270

Emergent quantum confinement at topological insulator surfaces
journal, January 2012

  • Bahramy, M. S.; King, P. D. C.; de la Torre, A.
  • Nature Communications, Vol. 3, Issue 1
  • DOI: 10.1038/ncomms2162

Spintronics and pseudospintronics in graphene and topological insulators
journal, April 2012

  • Pesin, Dmytro; MacDonald, Allan H.
  • Nature Materials, Vol. 11, Issue 5
  • DOI: 10.1038/nmat3305

Gate-Controlled Surface Conduction in Na-Doped Bi 2 Te 3 Topological Insulator Nanoplates
journal, February 2012

  • Wang, Yong; Xiu, Faxian; Cheng, Lina
  • Nano Letters, Vol. 12, Issue 3
  • DOI: 10.1021/nl202920p

Metal-supported high crystalline Bi 2 Se 3 quintuple layers
journal, October 2011


Semiempirical GGA-type density functional constructed with a long-range dispersion correction
journal, January 2006

  • Grimme, Stefan
  • Journal of Computational Chemistry, Vol. 27, Issue 15, p. 1787-1799
  • DOI: 10.1002/jcc.20495

A topological insulator surface under strong Coulomb, magnetic and disorder perturbations
journal, December 2010

  • Wray, L. Andrew; Xu, Su-Yang; Xia, Yuqi
  • Nature Physics, Vol. 7, Issue 1
  • DOI: 10.1038/nphys1838

Insulating Behavior in Ultrathin Bismuth Selenide Field Effect Transistors
journal, May 2011

  • Cho, Sungjae; Butch, Nicholas P.; Paglione, Johnpierre
  • Nano Letters, Vol. 11, Issue 5
  • DOI: 10.1021/nl200017f

Colloquium: Topological insulators
journal, November 2010


Self-Consistent Equations Including Exchange and Correlation Effects
journal, November 1965


Projector augmented-wave method
journal, December 1994


From ultrasoft pseudopotentials to the projector augmented-wave method
journal, January 1999


Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set
journal, October 1996


Proximity Effect in Graphene–Topological-Insulator Heterostructures
journal, March 2014


Bulk metals with helical surface states
journal, November 2010


Spin Polarization and Transport of Surface States in the Topological Insulators Bi 2 Se 3 and Bi 2 Te 3 from First Principles
journal, December 2010


Photoemission Spectroscopy of Magnetic and Nonmagnetic Impurities on the Surface of the Bi 2 Se 3 Topological Insulator
journal, March 2012


Two-dimensional surface charge transport in topological insulators
journal, October 2010

  • Culcer, Dimitrie; Hwang, E. H.; Stanescu, Tudor D.
  • Physical Review B, Vol. 82, Issue 15, Article No. 155457
  • DOI: 10.1103/PhysRevB.82.155457

Reducing Dzyaloshinskii-Moriya interaction and field-free spin-orbit torque switching in synthetic antiferromagnets
journal, May 2021


Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect
journal, February 2020


Topological insulators
journal, October 2014


Bulk metals with helical surface states
text, January 2010


Two-dimensional surface charge transport in topological insulators
text, January 2010


Insulating behavior in ultra-thin bismuth selenide field effect transistors
text, January 2012


Proximity effect in graphene-topological insulator heterostructures
text, January 2013


Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
text, January 2006


Works referencing / citing this record:

Atomistic study of an ideal metal/thermoelectric contact: The full-Heusler/half-Heusler interface
journal, January 2019

  • Spataru, Catalin D.; He, Yuping; Léonard, François
  • APL Materials, Vol. 7, Issue 1
  • DOI: 10.1063/1.5052271

High-Efficiency Thin-Film Superlattice Thermoelectric Cooler Modules Enabled by Low Resistivity Contacts
journal, January 2018

  • He, Yuping; Léonard, François; Medlin, Douglas L.
  • Advanced Electronic Materials, Vol. 4, Issue 3
  • DOI: 10.1002/aelm.201700381

Facile synthesis of high-crystalline Bi2Se3 nanoribbons without Se vacancies and their properties
journal, January 2020


Millimetre-long transport of photogenerated carriers in topological insulators
journal, December 2019


Atomistic study of an ideal metal/thermoelectric contact: the full-Heusler/half-Heusler interface
text, January 2018