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Title: Enhancing crystallinity of C 60 layer by thickness-control of underneath pentacene layer for high mobility C 60 /pentacene ambipolar transistors

Authors:
; ; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1114976
Grant/Contract Number:  
AC02-06CH11357
Resource Type:
Published Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Name: Applied Physics Letters Journal Volume: 102 Journal Issue: 4; Journal ID: ISSN 0003-6951
Publisher:
American Institute of Physics
Country of Publication:
United States
Language:
English

Citation Formats

Ahn, Kwangseok, Beom Kim, Jong, Park, Hyunjun, Kim, Hyunjung, Hyung Lee, Moo, Joon Kim, Beom, Ho Cho, Jeong, Sung Kang, Moon, and Ryeol Lee, Dong. Enhancing crystallinity of C 60 layer by thickness-control of underneath pentacene layer for high mobility C 60 /pentacene ambipolar transistors. United States: N. p., 2013. Web. doi:10.1063/1.4789873.
Ahn, Kwangseok, Beom Kim, Jong, Park, Hyunjun, Kim, Hyunjung, Hyung Lee, Moo, Joon Kim, Beom, Ho Cho, Jeong, Sung Kang, Moon, & Ryeol Lee, Dong. Enhancing crystallinity of C 60 layer by thickness-control of underneath pentacene layer for high mobility C 60 /pentacene ambipolar transistors. United States. doi:10.1063/1.4789873.
Ahn, Kwangseok, Beom Kim, Jong, Park, Hyunjun, Kim, Hyunjung, Hyung Lee, Moo, Joon Kim, Beom, Ho Cho, Jeong, Sung Kang, Moon, and Ryeol Lee, Dong. Mon . "Enhancing crystallinity of C 60 layer by thickness-control of underneath pentacene layer for high mobility C 60 /pentacene ambipolar transistors". United States. doi:10.1063/1.4789873.
@article{osti_1114976,
title = {Enhancing crystallinity of C 60 layer by thickness-control of underneath pentacene layer for high mobility C 60 /pentacene ambipolar transistors},
author = {Ahn, Kwangseok and Beom Kim, Jong and Park, Hyunjun and Kim, Hyunjung and Hyung Lee, Moo and Joon Kim, Beom and Ho Cho, Jeong and Sung Kang, Moon and Ryeol Lee, Dong},
abstractNote = {},
doi = {10.1063/1.4789873},
journal = {Applied Physics Letters},
number = 4,
volume = 102,
place = {United States},
year = {2013},
month = {1}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1063/1.4789873

Citation Metrics:
Cited by: 17 works
Citation information provided by
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