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Title: Charge Relaxation in a Single-Electron Si / SiGe Double Quantum Dot

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1104285
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 111; Journal Issue: 4; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Wang, K., Payette, C., Dovzhenko, Y., Deelman, P. W., and Petta, J. R. Charge Relaxation in a Single-Electron Si / SiGe Double Quantum Dot. United States: N. p., 2013. Web. doi:10.1103/PhysRevLett.111.046801.
Wang, K., Payette, C., Dovzhenko, Y., Deelman, P. W., & Petta, J. R. Charge Relaxation in a Single-Electron Si / SiGe Double Quantum Dot. United States. doi:10.1103/PhysRevLett.111.046801.
Wang, K., Payette, C., Dovzhenko, Y., Deelman, P. W., and Petta, J. R. Mon . "Charge Relaxation in a Single-Electron Si / SiGe Double Quantum Dot". United States. doi:10.1103/PhysRevLett.111.046801.
@article{osti_1104285,
title = {Charge Relaxation in a Single-Electron Si / SiGe Double Quantum Dot},
author = {Wang, K. and Payette, C. and Dovzhenko, Y. and Deelman, P. W. and Petta, J. R.},
abstractNote = {},
doi = {10.1103/PhysRevLett.111.046801},
journal = {Physical Review Letters},
number = 4,
volume = 111,
place = {United States},
year = {2013},
month = {7}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.111.046801

Citation Metrics:
Cited by: 36 works
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