Electron-limiting defect complex in hyperdoped GaAs: The center
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1103991
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 87; Journal Issue: 11; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Ma, Jie, and Wei, Su-Huai. Electron-limiting defect complex in hyperdoped GaAs: The D D X center. United States: N. p., 2013.
Web. doi:10.1103/PhysRevB.87.115210.
Ma, Jie, & Wei, Su-Huai. Electron-limiting defect complex in hyperdoped GaAs: The D D X center. United States. https://doi.org/10.1103/PhysRevB.87.115210
Ma, Jie, and Wei, Su-Huai. Fri .
"Electron-limiting defect complex in hyperdoped GaAs: The D D X center". United States. https://doi.org/10.1103/PhysRevB.87.115210.
@article{osti_1103991,
title = {Electron-limiting defect complex in hyperdoped GaAs: The D D X center},
author = {Ma, Jie and Wei, Su-Huai},
abstractNote = {},
doi = {10.1103/PhysRevB.87.115210},
journal = {Physical Review B},
number = 11,
volume = 87,
place = {United States},
year = {2013},
month = {3}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.87.115210
https://doi.org/10.1103/PhysRevB.87.115210
Other availability
Cited by: 4 works
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