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Title: Electron-limiting defect complex in hyperdoped GaAs: The D D X center

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1103991
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 87; Journal Issue: 11; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Ma, Jie, and Wei, Su-Huai. Electron-limiting defect complex in hyperdoped GaAs: The D D X center. United States: N. p., 2013. Web. doi:10.1103/PhysRevB.87.115210.
Ma, Jie, & Wei, Su-Huai. Electron-limiting defect complex in hyperdoped GaAs: The D D X center. United States. doi:10.1103/PhysRevB.87.115210.
Ma, Jie, and Wei, Su-Huai. Fri . "Electron-limiting defect complex in hyperdoped GaAs: The D D X center". United States. doi:10.1103/PhysRevB.87.115210.
@article{osti_1103991,
title = {Electron-limiting defect complex in hyperdoped GaAs: The D D X center},
author = {Ma, Jie and Wei, Su-Huai},
abstractNote = {},
doi = {10.1103/PhysRevB.87.115210},
journal = {Physical Review B},
number = 11,
volume = 87,
place = {United States},
year = {2013},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.87.115210

Citation Metrics:
Cited by: 2 works
Citation information provided by
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