Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1103891
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review B
- Additional Journal Information:
- Journal Volume: 87; Journal Issue: 12; Journal ID: ISSN 1098-0121
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
van Schooten, K. J., Huang, J., Talapin, D. V., Boehme, C., and Lupton, J. M.. Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals. United States: N. p., 2013.
Web. doi:10.1103/PhysRevB.87.125412.
van Schooten, K. J., Huang, J., Talapin, D. V., Boehme, C., & Lupton, J. M.. Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals. United States. https://doi.org/10.1103/PhysRevB.87.125412
van Schooten, K. J., Huang, J., Talapin, D. V., Boehme, C., and Lupton, J. M.. Wed .
"Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals". United States. https://doi.org/10.1103/PhysRevB.87.125412.
@article{osti_1103891,
title = {Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals},
author = {van Schooten, K. J. and Huang, J. and Talapin, D. V. and Boehme, C. and Lupton, J. M.},
abstractNote = {},
doi = {10.1103/PhysRevB.87.125412},
journal = {Physical Review B},
number = 12,
volume = 87,
place = {United States},
year = {2013},
month = {3}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevB.87.125412
https://doi.org/10.1103/PhysRevB.87.125412
Other availability
Cited by: 14 works
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