skip to main content
DOE PAGES title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1103891
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 87; Journal Issue: 12; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

van Schooten, K. J., Huang, J., Talapin, D. V., Boehme, C., and Lupton, J. M. Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals. United States: N. p., 2013. Web. doi:10.1103/PhysRevB.87.125412.
van Schooten, K. J., Huang, J., Talapin, D. V., Boehme, C., & Lupton, J. M. Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals. United States. doi:10.1103/PhysRevB.87.125412.
van Schooten, K. J., Huang, J., Talapin, D. V., Boehme, C., and Lupton, J. M. Wed . "Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals". United States. doi:10.1103/PhysRevB.87.125412.
@article{osti_1103891,
title = {Spin-dependent electronic processes and long-lived spin coherence of deep-level trap sites in CdS nanocrystals},
author = {van Schooten, K. J. and Huang, J. and Talapin, D. V. and Boehme, C. and Lupton, J. M.},
abstractNote = {},
doi = {10.1103/PhysRevB.87.125412},
journal = {Physical Review B},
number = 12,
volume = 87,
place = {United States},
year = {2013},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.87.125412

Citation Metrics:
Cited by: 7 works
Citation information provided by
Web of Science

Save / Share: