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Title: Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach

Authors:
; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1103890
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 11; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Xiang, H. J., Huang, Bing, Kan, Erjun, Wei, Su-Huai, and Gong, X. G. Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach. United States: N. p., 2013. Web. doi:10.1103/PhysRevLett.110.118702.
Xiang, H. J., Huang, Bing, Kan, Erjun, Wei, Su-Huai, & Gong, X. G. Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach. United States. doi:10.1103/PhysRevLett.110.118702.
Xiang, H. J., Huang, Bing, Kan, Erjun, Wei, Su-Huai, and Gong, X. G. Wed . "Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach". United States. doi:10.1103/PhysRevLett.110.118702.
@article{osti_1103890,
title = {Towards Direct-Gap Silicon Phases by the Inverse Band Structure Design Approach},
author = {Xiang, H. J. and Huang, Bing and Kan, Erjun and Wei, Su-Huai and Gong, X. G.},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.118702},
journal = {Physical Review Letters},
number = 11,
volume = 110,
place = {United States},
year = {2013},
month = {3}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.110.118702

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Cited by: 59 works
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