Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field

Chen, Li; Wang, Z. F.; Liu, Feng

doi:10.1103/PhysRevB.87.235420

Title: Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field

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Authors:: Chen, Li; Wang, Z. F.; Liu, Feng

Publication Date:: 2013-06-18

Sponsoring Org.:: USDOE

OSTI Identifier:: 1103836

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 87; Journal Issue: 23; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Chen, Li, Wang, Z. F., and Liu, Feng. Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field.  United States: N. p., 2013. 
Web.  doi:10.1103/PhysRevB.87.235420.

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                    Chen, Li, Wang, Z. F., & Liu, Feng. Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field.  United States.  https://doi.org/10.1103/PhysRevB.87.235420

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                    Chen, Li, Wang, Z. F., and Liu, Feng. Tue .  
"Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field".  United States.  https://doi.org/10.1103/PhysRevB.87.235420.

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@article{osti_1103836,

  title        = {Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field},

  author       = {Chen, Li and Wang, Z. F. and Liu, Feng},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.87.235420},

  journal      = {Physical Review B},

  number       = 23,

  volume       = 87,

  place        = {United States},

  year         = {2013},

  month        = {6}

}

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