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Title: Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1103836
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 87; Journal Issue: 23; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Chen, Li, Wang, Z. F., and Liu, Feng. Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field. United States: N. p., 2013. Web. doi:10.1103/PhysRevB.87.235420.
Chen, Li, Wang, Z. F., & Liu, Feng. Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field. United States. doi:10.1103/PhysRevB.87.235420.
Chen, Li, Wang, Z. F., and Liu, Feng. Tue . "Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field". United States. doi:10.1103/PhysRevB.87.235420.
@article{osti_1103836,
title = {Robustness of two-dimensional topological insulator states in bilayer bismuth against strain and electrical field},
author = {Chen, Li and Wang, Z. F. and Liu, Feng},
abstractNote = {},
doi = {10.1103/PhysRevB.87.235420},
journal = {Physical Review B},
number = 23,
volume = 87,
place = {United States},
year = {2013},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.87.235420

Citation Metrics:
Cited by: 43 works
Citation information provided by
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