Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

Chapler, B. C.; Mack, S.; Ju, L.; Elson, T. W.; Boudouris, B. W.; Namdas, E.; Yuen, J. D.; Heeger, A. J.; Samarth, N.; Di Ventra, M.; Segalman, R. A.; Awschalom, D. D.; Wang, F.; Basov, D. N.

doi:10.1103/PhysRevB.86.165302

Title: Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices

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Authors:: Chapler, B. C.; Mack, S.; Ju, L.; Elson, T. W.; Boudouris, B. W.; Namdas, E.; Yuen, J. D.; Heeger, A. J.; Samarth, N.; Di Ventra, M.; Segalman, R. A.; Awschalom, D. D.; Wang, F.; Basov, D. N.

Publication Date:: Mon Oct 01 00:00:00 EDT 2012

Sponsoring Org.:: USDOE

OSTI Identifier:: 1103436

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review B

Additional Journal Information:: Journal Volume: 86; Journal Issue: 16; Journal ID: ISSN 1098-0121

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Chapler, B. C., Mack, S., Ju, L., Elson, T. W., Boudouris, B. W., Namdas, E., Yuen, J. D., Heeger, A. J., Samarth, N., Di Ventra, M., Segalman, R. A., Awschalom, D. D., Wang, F., and Basov, D. N. Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevB.86.165302.

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                    Chapler, B. C., Mack, S., Ju, L., Elson, T. W., Boudouris, B. W., Namdas, E., Yuen, J. D., Heeger, A. J., Samarth, N., Di Ventra, M., Segalman, R. A., Awschalom, D. D., Wang, F., & Basov, D. N. Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices.  United States.  https://doi.org/10.1103/PhysRevB.86.165302

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                    Chapler, B. C., Mack, S., Ju, L., Elson, T. W., Boudouris, B. W., Namdas, E., Yuen, J. D., Heeger, A. J., Samarth, N., Di Ventra, M., Segalman, R. A., Awschalom, D. D., Wang, F., and Basov, D. N. Mon .  
"Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices".  United States.  https://doi.org/10.1103/PhysRevB.86.165302.

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@article{osti_1103436,

  title        = {Infrared conductivity of hole accumulation and depletion layers in (Ga,Mn)As- and (Ga,Be)As-based electric field-effect devices},

  author       = {Chapler, B. C. and Mack, S. and Ju, L. and Elson, T. W. and Boudouris, B. W. and Namdas, E. and Yuen, J. D. and Heeger, A. J. and Samarth, N. and Di Ventra, M. and Segalman, R. A. and Awschalom, D. D. and Wang, F. and Basov, D. N.},

  abstractNote = {},

  doi          = {10.1103/PhysRevB.86.165302},

  journal      = {Physical Review B},

  number       = 16,

  volume       = 86,

  place        = {United States},

  year         = {Mon Oct 01 00:00:00 EDT 2012},

  month        = {Mon Oct 01 00:00:00 EDT 2012}

}

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