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Title: Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1103199
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 9; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Myers, M. T., Charnvanichborikarn, S., Shao, L., and Kucheyev, S. O. Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si. United States: N. p., 2012. Web. doi:10.1103/PhysRevLett.109.095502.
Myers, M. T., Charnvanichborikarn, S., Shao, L., & Kucheyev, S. O. Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si. United States. doi:10.1103/PhysRevLett.109.095502.
Myers, M. T., Charnvanichborikarn, S., Shao, L., and Kucheyev, S. O. Mon . "Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si". United States. doi:10.1103/PhysRevLett.109.095502.
@article{osti_1103199,
title = {Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si},
author = {Myers, M. T. and Charnvanichborikarn, S. and Shao, L. and Kucheyev, S. O.},
abstractNote = {},
doi = {10.1103/PhysRevLett.109.095502},
journal = {Physical Review Letters},
number = 9,
volume = 109,
place = {United States},
year = {2012},
month = {8}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.109.095502

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Cited by: 22 works
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