Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si

doi:10.1103/PhysRevLett.109.095502

Title: Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si

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Authors:: Myers, M. T.; Charnvanichborikarn, S.; Shao, L.; Kucheyev, S. O.

Publication Date:: 2012-08-27

Sponsoring Org.:: USDOE

OSTI Identifier:: 1103199

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 109; Journal Issue: 9; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

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                    Myers, M. T., Charnvanichborikarn, S., Shao, L., and Kucheyev, S. O. Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si.  United States: N. p., 2012. 
        Web.  doi:10.1103/PhysRevLett.109.095502.

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                    Myers, M. T., Charnvanichborikarn, S., Shao, L., & Kucheyev, S. O. Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si.  United States.  doi:10.1103/PhysRevLett.109.095502.

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                    Myers, M. T., Charnvanichborikarn, S., Shao, L., and Kucheyev, S. O. Mon .  
        "Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si".  United States.  doi:10.1103/PhysRevLett.109.095502.

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@article{osti_1103199,

  title        = {Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si},

  author       = {Myers, M. T. and Charnvanichborikarn, S. and Shao, L. and Kucheyev, S. O.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.109.095502},

  journal      = {Physical Review Letters},

  number       = 9,

  volume       = 109,

  place        = {United States},

  year         = {2012},

  month        = {8}

}

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DOI: 10.1103/PhysRevLett.109.095502

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