Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si

Myers, M. T.; Charnvanichborikarn, S.; Shao, L.; Kucheyev, S. O.

doi:10.1103/PhysRevLett.109.095502

Title: Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si

Full Record
Other Related Research

Authors:: Myers, M. T.; Charnvanichborikarn, S.; Shao, L.; Kucheyev, S. O.

Publication Date:: 2012-08-27

Sponsoring Org.:: USDOE

OSTI Identifier:: 1103199

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 109; Journal Issue: 9; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Myers, M. T., Charnvanichborikarn, S., Shao, L., and Kucheyev, S. O. Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si.  United States: N. p., 2012. 
Web.  doi:10.1103/PhysRevLett.109.095502.

Copy to clipboard


                    Myers, M. T., Charnvanichborikarn, S., Shao, L., & Kucheyev, S. O. Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si.  United States.  https://doi.org/10.1103/PhysRevLett.109.095502

Copy to clipboard


                    Myers, M. T., Charnvanichborikarn, S., Shao, L., and Kucheyev, S. O. Mon .  
"Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si".  United States.  https://doi.org/10.1103/PhysRevLett.109.095502.

Copy to clipboard


                    
@article{osti_1103199,

  title        = {Pulsed Ion Beam Measurement of the Time Constant of Dynamic Annealing in Si},

  author       = {Myers, M. T. and Charnvanichborikarn, S. and Shao, L. and Kucheyev, S. O.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.109.095502},

  journal      = {Physical Review Letters},

  number       = 9,

  volume       = 109,

  place        = {United States},

  year         = {2012},

  month        = {8}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.109.095502

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 22 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Dynamic annealing in Ge studied by pulsed ion beams

Journal Article Wallace, J. B. ; Bayu Aji, L. B. ; Shao, L. ; ... - Scientific Reports
Cited by 3
https://doi.org/10.1038/s41598-017-13161-1

Full Text Available
Radiation defect dynamics in Si at room temperature studied by pulsed ion beams

Journal Article Wallace, J. B. ; Charnvanichborikarn, S. ; Bayu Aji, L. B. ; ... - Journal of Applied Physics

The evolution of radiation defects after the thermalization of collision cascades often plays the dominant role in the formation of stable radiation disorder in crystalline solids of interest to electronics and nuclear materials applications. Here in this paper, we explore a pulsed-ion-beam method to study defect interaction dynamics in Si crystals bombarded at room temperature with 500 keV Ne, Ar, Kr, and Xe ions. The effective time constant of defect interaction is measured directly by studying the dependence of lattice disorder, monitored by ion channeling, on the passive part of the beam duty cycle. The effective defect diffusion length ismore »« less
Cited by 15
https://doi.org/10.1063/1.4932209

Full Text Available
Radiation defect dynamics in Si at room temperature studied by pulsed ion beams

Journal Article Wallace, J. B. ; Myers, M. T. ; Charnvanichborikarn, S. ; ... - Journal of Applied Physics

The evolution of radiation defects after the thermalization of collision cascades often plays the dominant role in the formation of stable radiation disorder in crystalline solids of interest to electronics and nuclear materials applications. Here, we explore a pulsed-ion-beam method to study defect interaction dynamics in Si crystals bombarded at room temperature with 500 keV Ne, Ar, Kr, and Xe ions. The effective time constant of defect interaction is measured directly by studying the dependence of lattice disorder, monitored by ion channeling, on the passive part of the beam duty cycle. The effective defect diffusion length is revealed by the dependencemore »« less
https://doi.org/10.1063/1.4932209
Comparison of pulsed electron beam-annealed and pulsed ruby laser-annealed ion-implanted silicon. [100keV As/sup +/]

Conference Wilson, S R ; Appleton, B R ; White, C W ; ...

Recently two new techniques, pulsed electron beam annealing and pulsed laser annealing, have been developed for processing ion-implanted silicon. These two types of anneals have been compared using ion-channeling, ion back-scattering, and transmission electron microscopy (TEM). Single crystal samples were implanted with 100 keV As/sup +/ ions to a dose of approx. 1 x 10/sup 16/ ions/cm/sup 2/ and subsequently annealed by either a pulsed Ruby laser or a pulsed electron beam. Our results show in both cases that the near-surface region has melted and regrown epitaxially with nearly all of the implanted As (97 to 99%) incroporated onto latticemore »« less
Full Text Available
Time-resolved measurement of energy and species of an intense pulsed ion beam

Journal Article Matsuzawa, T ; Takahashi, A ; Masugata, K ; ... - Rev. Sci. Instrum.; (United States)

A time-resolvable Thomson-parabola spectrometer is developed employing a microchannel-plate image intensifier, which acts as a high-speed shutter (approx.5 ns) by gating the applied voltage. Using such a spectrometer, we have achieved the measurement of temporal behavior of beam energy for various ion species of an intense pulsed ion beam extracted from a dual-current-feed magnetically insulated diode. The energy of protons is found to be in a good agreement with the diode voltage.
https://doi.org/10.1063/1.1138364

Similar Records