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Title: Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe

Authors:
;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102795
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 110; Journal Issue: 23; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Ma, Jie, and Wei, Su-Huai. Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe. United States: N. p., 2013. Web. doi:10.1103/PhysRevLett.110.235901.
Ma, Jie, & Wei, Su-Huai. Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe. United States. doi:10.1103/PhysRevLett.110.235901.
Ma, Jie, and Wei, Su-Huai. Tue . "Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe". United States. doi:10.1103/PhysRevLett.110.235901.
@article{osti_1102795,
title = {Origin of Novel Diffusions of Cu and Ag in Semiconductors: The Case of CdTe},
author = {Ma, Jie and Wei, Su-Huai},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.235901},
journal = {Physical Review Letters},
number = 23,
volume = 110,
place = {United States},
year = {2013},
month = {6}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.110.235901

Citation Metrics:
Cited by: 20 works
Citation information provided by
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