Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells
Journal Article
·
· Physical Review B
Not Available
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 1102774
- Journal Information:
- Physical Review B, Journal Name: Physical Review B Journal Issue: 20 Vol. 87; ISSN 1098-0121; ISSN PRBMDO
- Publisher:
- American Physical SocietyCopyright Statement
- Country of Publication:
- United States
- Language:
- English
Similar Records
Comparison of electrostatic and localized plasmon induced light enhancement in hybrid InGaN/GaN quantum wells
Electron bombardment induced enhancement of luminescence from ZnCdMgSe quantum well light emitting diodes
Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots
Journal Article
·
2014
· Applied Physics Letters
·
OSTI ID:22299893
+3 more
Electron bombardment induced enhancement of luminescence from ZnCdMgSe quantum well light emitting diodes
Journal Article
·
2005
· Journal of Applied Physics
·
OSTI ID:20668251
+1 more
Mechanism of electronic-excitation transfer in organic light-emitting devices based on semiconductor quantum dots
Journal Article
·
2013
· Semiconductors
·
OSTI ID:22121701
+2 more