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Title: Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102774
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 87; Journal Issue: 20; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Llopis, A., Lin, J., Pereira, S. M. S., Trindade, T., Martins, M. A., Watson, I. M., Krokhin, A. A., and Neogi, A. Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells. United States: N. p., 2013. Web. doi:10.1103/PhysRevB.87.201304.
Llopis, A., Lin, J., Pereira, S. M. S., Trindade, T., Martins, M. A., Watson, I. M., Krokhin, A. A., & Neogi, A. Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells. United States. doi:10.1103/PhysRevB.87.201304.
Llopis, A., Lin, J., Pereira, S. M. S., Trindade, T., Martins, M. A., Watson, I. M., Krokhin, A. A., and Neogi, A. Thu . "Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells". United States. doi:10.1103/PhysRevB.87.201304.
@article{osti_1102774,
title = {Electrostatic mechanism of strong enhancement of light emitted by semiconductor quantum wells},
author = {Llopis, A. and Lin, J. and Pereira, S. M. S. and Trindade, T. and Martins, M. A. and Watson, I. M. and Krokhin, A. A. and Neogi, A.},
abstractNote = {},
doi = {10.1103/PhysRevB.87.201304},
journal = {Physical Review B},
number = 20,
volume = 87,
place = {United States},
year = {2013},
month = {5}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.87.201304

Citation Metrics:
Cited by: 7 works
Citation information provided by
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