Interfacial Bonding and Structure of Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1102772
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Name: Physical Review Letters Journal Volume: 110 Journal Issue: 22; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Liu, Y., Wang, H. -H., Bian, G., Zhang, Z., Lee, S. S., Fenter, P. A., Tischler, J. Z., Hong, H., and Chiang, T. -C. Interfacial Bonding and Structure of Bi 2 Te 3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering. United States: N. p., 2013.
Web. doi:10.1103/PhysRevLett.110.226103.
Liu, Y., Wang, H. -H., Bian, G., Zhang, Z., Lee, S. S., Fenter, P. A., Tischler, J. Z., Hong, H., & Chiang, T. -C. Interfacial Bonding and Structure of Bi 2 Te 3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering. United States. https://doi.org/10.1103/PhysRevLett.110.226103
Liu, Y., Wang, H. -H., Bian, G., Zhang, Z., Lee, S. S., Fenter, P. A., Tischler, J. Z., Hong, H., and Chiang, T. -C. Thu .
"Interfacial Bonding and Structure of Bi 2 Te 3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering". United States. https://doi.org/10.1103/PhysRevLett.110.226103.
@article{osti_1102772,
title = {Interfacial Bonding and Structure of Bi 2 Te 3 Topological Insulator Films on Si(111) Determined by Surface X-Ray Scattering},
author = {Liu, Y. and Wang, H. -H. and Bian, G. and Zhang, Z. and Lee, S. S. and Fenter, P. A. and Tischler, J. Z. and Hong, H. and Chiang, T. -C.},
abstractNote = {},
doi = {10.1103/PhysRevLett.110.226103},
journal = {Physical Review Letters},
number = 22,
volume = 110,
place = {United States},
year = {2013},
month = {5}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.110.226103
https://doi.org/10.1103/PhysRevLett.110.226103
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Cited by: 4 works
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