First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO
- Authors:
- Publication Date:
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 1102612
- Resource Type:
- Publisher's Accepted Manuscript
- Journal Name:
- Physical Review Letters
- Additional Journal Information:
- Journal Volume: 109; Journal Issue: 26; Journal ID: ISSN 0031-9007
- Publisher:
- American Physical Society
- Country of Publication:
- United States
- Language:
- English
Citation Formats
Alkauskas, Audrius, Lyons, John L., Steiauf, Daniel, and Van de Walle, Chris G. First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO. United States: N. p., 2012.
Web. doi:10.1103/PhysRevLett.109.267401.
Alkauskas, Audrius, Lyons, John L., Steiauf, Daniel, & Van de Walle, Chris G. First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO. United States. https://doi.org/10.1103/PhysRevLett.109.267401
Alkauskas, Audrius, Lyons, John L., Steiauf, Daniel, and Van de Walle, Chris G. Fri .
"First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO". United States. https://doi.org/10.1103/PhysRevLett.109.267401.
@article{osti_1102612,
title = {First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO},
author = {Alkauskas, Audrius and Lyons, John L. and Steiauf, Daniel and Van de Walle, Chris G.},
abstractNote = {},
doi = {10.1103/PhysRevLett.109.267401},
journal = {Physical Review Letters},
number = 26,
volume = 109,
place = {United States},
year = {2012},
month = {12}
}
Free Publicly Available Full Text
Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.109.267401
https://doi.org/10.1103/PhysRevLett.109.267401
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Cited by: 45 works
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