First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

doi:10.1103/PhysRevLett.109.267401

Title: First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

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Authors:: Alkauskas, Audrius; Lyons, John L.; Steiauf, Daniel; Van de Walle, Chris G.

Publication Date:: 2012-12-28

Sponsoring Org.:: USDOE

OSTI Identifier:: 1102612

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 109; Journal Issue: 26; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Alkauskas, Audrius, Lyons, John L., Steiauf, Daniel, and Van de Walle, Chris G. First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO.  United States: N. p., 2012. 
        Web.  doi:10.1103/PhysRevLett.109.267401.

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                    Alkauskas, Audrius, Lyons, John L., Steiauf, Daniel, & Van de Walle, Chris G. First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO.  United States.  doi:10.1103/PhysRevLett.109.267401.

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                    Alkauskas, Audrius, Lyons, John L., Steiauf, Daniel, and Van de Walle, Chris G. Fri .  
        "First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO".  United States.  doi:10.1103/PhysRevLett.109.267401.

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@article{osti_1102612,

  title        = {First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO},

  author       = {Alkauskas, Audrius and Lyons, John L. and Steiauf, Daniel and Van de Walle, Chris G.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.109.267401},

  journal      = {Physical Review Letters},

  number       = 26,

  volume       = 109,

  place        = {United States},

  year         = {2012},

  month        = {12}

}

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Accepted Manuscript (Publisher)

Publisher's Version of Record
DOI: 10.1103/PhysRevLett.109.267401

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