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Title: First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO

Authors:
; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102612
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 109; Journal Issue: 26; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Alkauskas, Audrius, Lyons, John L., Steiauf, Daniel, and Van de Walle, Chris G. First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO. United States: N. p., 2012. Web. doi:10.1103/PhysRevLett.109.267401.
Alkauskas, Audrius, Lyons, John L., Steiauf, Daniel, & Van de Walle, Chris G. First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO. United States. doi:10.1103/PhysRevLett.109.267401.
Alkauskas, Audrius, Lyons, John L., Steiauf, Daniel, and Van de Walle, Chris G. Fri . "First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO". United States. doi:10.1103/PhysRevLett.109.267401.
@article{osti_1102612,
title = {First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO},
author = {Alkauskas, Audrius and Lyons, John L. and Steiauf, Daniel and Van de Walle, Chris G.},
abstractNote = {},
doi = {10.1103/PhysRevLett.109.267401},
journal = {Physical Review Letters},
number = 26,
volume = 109,
place = {United States},
year = {2012},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.109.267401

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Cited by: 45 works
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