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Title: Electronic Griffiths Phase in the Te-Doped Semiconductor FeSb2

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102546
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Name: Physical Review Letters Journal Volume: 109 Journal Issue: 25; Journal ID: ISSN 0031-9007
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Hu, Rongwei, Wang, Kefeng, Ryu, Hyejin, Lei, Hechang, Choi, E. S., Uhlarz, M., Wosnitza, J., and Petrovic, C. Electronic Griffiths Phase in the Te-Doped Semiconductor FeSb2. United States: N. p., 2012. Web. doi:10.1103/PhysRevLett.109.256401.
Hu, Rongwei, Wang, Kefeng, Ryu, Hyejin, Lei, Hechang, Choi, E. S., Uhlarz, M., Wosnitza, J., & Petrovic, C. Electronic Griffiths Phase in the Te-Doped Semiconductor FeSb2. United States. doi:10.1103/PhysRevLett.109.256401.
Hu, Rongwei, Wang, Kefeng, Ryu, Hyejin, Lei, Hechang, Choi, E. S., Uhlarz, M., Wosnitza, J., and Petrovic, C. Mon . "Electronic Griffiths Phase in the Te-Doped Semiconductor FeSb2". United States. doi:10.1103/PhysRevLett.109.256401.
@article{osti_1102546,
title = {Electronic Griffiths Phase in the Te-Doped Semiconductor FeSb2},
author = {Hu, Rongwei and Wang, Kefeng and Ryu, Hyejin and Lei, Hechang and Choi, E. S. and Uhlarz, M. and Wosnitza, J. and Petrovic, C.},
abstractNote = {},
doi = {10.1103/PhysRevLett.109.256401},
journal = {Physical Review Letters},
number = 25,
volume = 109,
place = {United States},
year = {2012},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevLett.109.256401

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Cited by: 5 works
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