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Title: Orientation and rate dependence in high strain-rate compression of single-crystal silicon

Authors:
; ; ; ; ; ; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102542
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 86; Journal Issue: 24; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Smith, R. F., Minich, R. W., Rudd, R. E., Eggert, J. H., Bolme, C. A., Brygoo, S. L., Jones, A. M., and Collins, G. W. Orientation and rate dependence in high strain-rate compression of single-crystal silicon. United States: N. p., 2012. Web. doi:10.1103/PhysRevB.86.245204.
Smith, R. F., Minich, R. W., Rudd, R. E., Eggert, J. H., Bolme, C. A., Brygoo, S. L., Jones, A. M., & Collins, G. W. Orientation and rate dependence in high strain-rate compression of single-crystal silicon. United States. doi:10.1103/PhysRevB.86.245204.
Smith, R. F., Minich, R. W., Rudd, R. E., Eggert, J. H., Bolme, C. A., Brygoo, S. L., Jones, A. M., and Collins, G. W. Mon . "Orientation and rate dependence in high strain-rate compression of single-crystal silicon". United States. doi:10.1103/PhysRevB.86.245204.
@article{osti_1102542,
title = {Orientation and rate dependence in high strain-rate compression of single-crystal silicon},
author = {Smith, R. F. and Minich, R. W. and Rudd, R. E. and Eggert, J. H. and Bolme, C. A. and Brygoo, S. L. and Jones, A. M. and Collins, G. W.},
abstractNote = {},
doi = {10.1103/PhysRevB.86.245204},
journal = {Physical Review B},
number = 24,
volume = 86,
place = {United States},
year = {2012},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.86.245204

Citation Metrics:
Cited by: 11 works
Citation information provided by
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