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Title: Enhancing phonon transmission across a Si/Ge interface by atomic roughness: First-principles study with the Green's function method

Authors:
; ;
Publication Date:
Sponsoring Org.:
USDOE
OSTI Identifier:
1102499
Resource Type:
Publisher's Accepted Manuscript
Journal Name:
Physical Review B
Additional Journal Information:
Journal Volume: 86; Journal Issue: 23; Journal ID: ISSN 1098-0121
Publisher:
American Physical Society
Country of Publication:
United States
Language:
English

Citation Formats

Tian, Zhiting, Esfarjani, Keivan, and Chen, Gang. Enhancing phonon transmission across a Si/Ge interface by atomic roughness: First-principles study with the Green's function method. United States: N. p., 2012. Web. doi:10.1103/PhysRevB.86.235304.
Tian, Zhiting, Esfarjani, Keivan, & Chen, Gang. Enhancing phonon transmission across a Si/Ge interface by atomic roughness: First-principles study with the Green's function method. United States. doi:10.1103/PhysRevB.86.235304.
Tian, Zhiting, Esfarjani, Keivan, and Chen, Gang. Mon . "Enhancing phonon transmission across a Si/Ge interface by atomic roughness: First-principles study with the Green's function method". United States. doi:10.1103/PhysRevB.86.235304.
@article{osti_1102499,
title = {Enhancing phonon transmission across a Si/Ge interface by atomic roughness: First-principles study with the Green's function method},
author = {Tian, Zhiting and Esfarjani, Keivan and Chen, Gang},
abstractNote = {},
doi = {10.1103/PhysRevB.86.235304},
journal = {Physical Review B},
number = 23,
volume = 86,
place = {United States},
year = {2012},
month = {12}
}

Journal Article:
Free Publicly Available Full Text
Publisher's Version of Record
DOI: 10.1103/PhysRevB.86.235304

Citation Metrics:
Cited by: 80 works
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