Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field

Li, Bin; Roschewsky, Niklas; Assaf, Badih A.; Eich, Marius; Epstein-Martin, Marguerite; Heiman, Don; Münzenberg, Markus; Moodera, Jagadeesh S.

doi:10.1103/PhysRevLett.110.097001

Title: Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field

Full Record
Other Related Research

Authors:: Li, Bin; Roschewsky, Niklas; Assaf, Badih A.; Eich, Marius; Epstein-Martin, Marguerite; Heiman, Don; Münzenberg, Markus; Moodera, Jagadeesh S.

Publication Date:: Mon Feb 25 00:00:00 EST 2013

Sponsoring Org.:: USDOE

OSTI Identifier:: 1102353

Resource Type:: Publisher's Accepted Manuscript

Journal Name:: Physical Review Letters

Additional Journal Information:: Journal Volume: 110; Journal Issue: 9; Journal ID: ISSN 0031-9007

Publisher:: American Physical Society

Country of Publication:: United States

Language:: English

Citation Formats


                    Li, Bin, Roschewsky, Niklas, Assaf, Badih A., Eich, Marius, Epstein-Martin, Marguerite, Heiman, Don, Münzenberg, Markus, and Moodera, Jagadeesh S. Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field.  United States: N. p., 2013. 
Web.  doi:10.1103/PhysRevLett.110.097001.

Copy to clipboard


                    Li, Bin, Roschewsky, Niklas, Assaf, Badih A., Eich, Marius, Epstein-Martin, Marguerite, Heiman, Don, Münzenberg, Markus, & Moodera, Jagadeesh S. Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field.  United States.  https://doi.org/10.1103/PhysRevLett.110.097001

Copy to clipboard


                    Li, Bin, Roschewsky, Niklas, Assaf, Badih A., Eich, Marius, Epstein-Martin, Marguerite, Heiman, Don, Münzenberg, Markus, and Moodera, Jagadeesh S. Mon .  
"Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field".  United States.  https://doi.org/10.1103/PhysRevLett.110.097001.

Copy to clipboard


                    
@article{osti_1102353,

  title        = {Superconducting Spin Switch with Infinite Magnetoresistance Induced by an Internal Exchange Field},

  author       = {Li, Bin and Roschewsky, Niklas and Assaf, Badih A. and Eich, Marius and Epstein-Martin, Marguerite and Heiman, Don and Münzenberg, Markus and Moodera, Jagadeesh S.},

  abstractNote = {},

  doi          = {10.1103/PhysRevLett.110.097001},

  journal      = {Physical Review Letters},

  number       = 9,

  volume       = 110,

  place        = {United States},

  year         = {Mon Feb 25 00:00:00 EST 2013},

  month        = {Mon Feb 25 00:00:00 EST 2013}

}

Copy to clipboard

Journal Article:

Free Publicly Available Full Text

Accepted Manuscript (Publisher)

Publisher's Version of Record
https://doi.org/10.1103/PhysRevLett.110.097001

Other availability

Search WorldCat to find libraries that may hold this journal

Citation Metrics:

Cited by: 78 works

Citation information provided by
Web of Science

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE PAGES and OSTI.GOV collections:

Effect of Interface-Induced Exchange Fields on Cuprate-Manganite Spin Switches

Journal Article Liu, Yaohua ; Visani, C. ; Nemes, N. M. ; ... - Physical Review Letters
Cited by 22
https://doi.org/10.1103/PhysRevLett.108.207205
Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

Journal Article Göckeritz, Robert ; Homonnay, Nico ; Müller, Alexander ; ... - AIP Advances

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La{sub 0.7}Sr{sub 0.3}MnO{sub 3}/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La{sub 0.7}Sr{sub 0.3}MnO{sub 3} surface. This modification influences the tunneling of charge carriers and thus both the electricalmore »« less
https://doi.org/10.1063/1.4945788
Exchange Field Induced Magnetoresistance in Colossal Magnetoresistance Manganites

Journal Article Krivorotov, I N ; Nikolaev, K R ; Dobin, A Yu ; ... - Physical Review Letters

The effect of an exchange field on the electrical transport in thin films of metallic ferromagnetic manganites has been investigated. The exchange field was induced both by direct exchange coupling in a ferromagnet/antiferromagnet multilayer and by indirect exchange interaction in a ferromagnet/paramagnet metallic superlattice. The electrical resistance of the metallic manganite layers was found to be determined by the magnitude of the vector sum of the effective exchange field and the external magnetic field.
https://doi.org/10.1103/PhysRevLett.86.5779
Spin fluctuation induced linear magnetoresistance in ultrathin superconducting FeSe films

Journal Article Wang, Qingyan ; Zhang, Wenhao ; Chen, Weiwei ; ... - 2D Materials

The discovery of high-temperature superconductivity in FeSe/STO has trigged great research interest to reveal a range of exotic physical phenomena in this novel material. Here we present a temperature dependent magnetotransport measurement for ultrathin FeSe/STO films with different thickness and protection layers. Remarkably, a surprising linear magnetoresistance (LMR) is observed around the superconducting transition temperatures but absent otherwise. The experimental LMR can be reproduced by magnetotransport calculations based on a model of magnetic field dependent disorder induced by spin fluctuation. Thus, the observed LMR in coexistence with superconductivity provides the first magnetotransport signature for spin fluctuation around the superconducting transitionmore » region in ultrathin FeSe/STO films.« less
Cited by 12
https://doi.org/10.1088/2053-1583/aa8165

Full Text Available
Joule Heating Effect on Field-Free Magnetization Switching by Spin-Orbit Torque in Exchange-Biased Systems

Journal Article Razavi, Seyed Armin ; Wu, Di ; Yu, Guoqiang ; ... - Physical Review Applied

Switching of magnetization via spin-orbit torque provides an efficient alternative for nonvolatile memory and logic devices. However, to achieve deterministic switching of perpendicular magnetization, an external magnetic field collinear with the current is usually required, which makes these devices inappropriate for practical applications. As such, in this work, we examine the current-induced magnetization switching in a perpendicularly magnetized exchange-biased Pt/CoFe/IrMn system. A magnetic field annealing technique is used to introduce in-plane exchange biases, which are quantitatively characterized. Under proper conditions, field-free current-driven switching is achieved.We study the Joule heating effect, and we show how it can decrease the in-plane exchangemore »« less
Cited by 46
https://doi.org/10.1103/PhysRevApplied.7.024023

Full Text Available

Similar Records